Room temperature operation of mid-infrared InAs₀₈₁Sb₀₁₉ based photovoltaic detectors with an In₀₂Al₀₈Sb barrier layer grown on GaAs substrates

Abstract

In this paper, InAsSb-based hetero-junction photovoltaic detector (HJPD) with an InAlSb barrier layer was grown on GaAs substrates. By using technology computer aided design (TCAD), a design of a barrier layer that can achieve nearly zero valance band offsets was accomplished. A high quality InAsSb epitaxial layer was obtained with relatively low threading dislocation density (TDD), calculated from a high-resolution X-ray diffraction (XRD) measurement. This layer showed a Hall mobility of 15,000 cm/V⋅s, which is the highest mobility among InAsSb layers with an Sb composition of around 20% grown on GaAs substrates. Temperature dependence of dark current, photocurrent response and responsivity were measured and analyzed for fabricated HJPD. HJPD showed the clear photocurrent response having a long cutoff wavelength of 5.35 μm at room temperature. It was observed that the dark current of HJPDs is dominated by the diffusion limited current at temperatures ranging from 200K to room temperature from the dark current analysis. Peak responsivity of HJPDs exhibited the 1.18 A/W and 15 mA/W for 83K and a room temperature under zero bias condition even without anti-reflection coating (ARC). From these results, we believe that HJPDs could be an appropriate PD device for future compact and low power dissipation mid-infrared on-chip sensors and imaging devices.

3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks

“…In contrast, III–V channel materials are a promising candidate for M3D integration due to low process temperature and high potential logic performance as well as multifunctionality such as imaging, display, photonic sensors, and so forth. − In this work, therefore, we suggest 3D stackable III–V synaptic transistors fabricated at low process temperatures. Here, we used an oxide charge trap layer for weight storage because the oxide layer can be deposited at quite low temperatures uniformly by atomic layer deposition (lower than 350 °C) and it shows very stable operation, as seen in the NAND flash technology.…”

Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems

“…Another important issue is to select the structure of the PDs itself. Among many PD structures, such as MSM and avalanche photodiodes (APDs), a simple p-i-n structure is promising because the photovoltaic mode contributes to high speed and low power consumption 17 .…”

Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light

“…Among several substrate candidates, III–V compound semiconductors can satisfy the requirements for fabricating broadband heterojunction PDs because of miscellaneous bandgaps corresponding from ultraviolet to long‐wavelength infrared (LWIR) region. [ 16–21 ] Additionally, III–V materials exhibited higher mobility (>10 3 cm 2 V ‐1 s ‐1 ) than that of Si which could contribute to the increase of detector speed. Nevertheless, few demonstrations on the integration of MoS 2 /III–V substrates have been reported because it could be caused by the difficulty of sample preparation due to easy oxidation and surface states.…”