Arrayed MoS₂–In_0.53Ga_0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light

Abstract

A high‐speed and broadband 5 × 5 photodetector array based on MoS2/In0.53Ga0.47As heterojunction is successfully demonstrated to take full advantage of the type‐II band‐aligned multilayer MoS2/In0.53Ga0.47As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS2/In0.53Ga0.47As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the detectivity of ≈1010 Jones at −3 V for the incident broadband light from 400 to 1550 nm. A very fast photoresponse is also obtained with a small rise/fall time in the order of microseconds both for visible (638 nm) and shortwave infrared (1310 nm). Finally, the image scanning properties of MoS2/In0.53Ga0.47As devices are demonstrated for visible and infrared light, indicating that the suggested device is one of the promising options for future broadband imager, which can be integrated on the focal plane arrays (FPAs).

Gas‐Phase Alkali Metal‐Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large‐Scale Precise Nucleation Control

“…[3][4][5][6] In particular, the metal-organic chemical vapor deposition (MOCVD) growth technique for 2D TMDCs has emerged as an industry-friendly process. [7][8][9][10][11][12] For the growth of 2D TMDCs, nucleation can be effectively suppressed by introducing alkali metal powders (e.g., NaCl and KCl) during the MOCVD process. [13][14][15][16][17][18][19] However, previous studies using alkali metal precursors have several drawbacks because the growth of TMDCs was performed by placing solid alkali metal precursors with low vapor pressure inside the growth chamber.…”

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

“…It was found that detectivity was enhanced from 10 9 to 10 10 jones (1 jones = 1 cm Hz 1/2 W −1 ) with the increase in the reverse bias, which exhibits excellent performance as compared to the previously reported work. 84 These results indicated that the progression of MoS 2 /In 0.53 Ga 0.47 As heterostructures is one of the feasible approaches to expand future applications such as communications, imaging, and sensors.…”

“…The device showed excellent uniformity in the structure and clear electrical rectifying properties. 84 To fabricate the MoS 2 /In 0.53 Ga 0.47 As PDs, the multilayer MoS 2 films were blended on the p-type 500 nm-thick In 0.53 Ga 0.47 As epitaxial structure with Au (gold) electrodes through metal–organic chemical vapor deposition (MOCVD), as represented in Fig. 3(a).…”

Antisolvent-Treated MAPbI3 and PbS Quantum Dots for High-Performance Broadband Photodetectors

“…In contrast to photodetectors (PDs) that only respond to a specific wavelength range, broadband photodetectors, which can detect from the ultraviolet (UV) to near-infrared (NIR) wavelengths, are very attractive in fields such as optical communications, , image sensing, , and daytime/night-time monitoring . Conventional commercial detectors based on III–V compound semiconductors, such as those based on InGaAs and InGaAsP, are limited by the high cost of the technology and the difficulty of integration with readout circuits, which prevent them from being widely used .…”