Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties.

Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization

“…Fabrication and characterization of properties of semiconductor nanomaterials, nanostructures and heterostructures (e.g., based on group IV Si, Ge, and Sn, emergent 2D transition metal dichalcogenides, Xene black phosphorus and graphdiyne, MXene, Se, Bi, and Te, CdS/CdSe) for applications in many fields ((opto)­electronics, (non)­linear photonics, spintronics and quantum computing, thermoelectrics, energy storage and conversion, catalysis, sensors, biomedical applications) are tackled in a great number of works. − Unique properties and enhanced device performance key for the development of nanoscience and nanotechnology have been highlighted. Emergent materials come with fascinating properties and prospect of wide range of versatile applications with remarkable device performance, but their study is still in its infancy and they present a lot of issues and challenges related to facile, low-cost, eco-friendly synthesis (at large scale) of high-quality nanostructures with targeted morphology and good stability under ambient conditions.…”

Fabrication of a wearable and foldable photodetector based on a WSe2-MXene 2D–2D heterostructure using a scalable handprint technique

“…Photodetectors based on two-dimensional (2D) materials have gained significant attention over the last decade due to their superior optoelectrical properties as compared to typical bulk materials. [7][8][9][10][11][12] Transition metal dichalcogenide (TMD) materials like WSe 2 , MoSe 2 , WS 2 , MoS 2 , ReS 2 , and MoTe 2 are types of 2D materials that are frequently employed in photo-detectors due to their high photon absorbance, strong lightmatter interactions, high mobilities, and tuneable bandgap. [13][14][15][16] The expression MX 2 (where M and X represent transition metals (W, Mo, Nb, Ta, etc.)…”

Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe3/MoS2

“…In the past two decades, layered van der Waals (vdW) materials have demonstrated great potential in a wide range of applications for next-generation optoelectronic, spintronic, and energy devices. − Due to their unique structures, mechanical flexibility, and excellent physical properties, such materials typically possess strong in-plane covalent bonds and weak interlayer vdW interactions, making them easily exfoliate into thin layers and freely stack together to form so-called vdW heterostructures. − Compared with traditional heterojunctions, the interfaces of vdW heterojunctions are dangling bond-free, which will greatly inhibit the recombination of photogenerated electron–hole pairs. So far, a variety of vdW materials and related heterostructures have been employed in optoelectronic devices, and their emerging properties have been attracting increasing attention. − …”