Narrowband detection is of urgent demand in many fields, such as machine vision, biofluorescence imaging, artificial intelligence, flame, or gas molecule monitoring. However, the restricted recognition area and complex integration hinder the development of narrowband photodetectors. Due to the excellent photoconversion efficiency, metal halide perovskites are emerging as a new star in the field of high‐performance photodetectors. In recent years, soaring attention has been focused on narrowband photodetectors using perovskites as absorbing layers, owing to the excellent narrowband detection performance and tunable narrowband absorption peaks covering a wide optical range. Herein, this review is focused on the latest research progress of perovskite narrowband photodetectors, emphasizing the strategy of using perovskites for narrowband photodetectors from novel functional integration to applications and existing problems. The study is looking forward to elucidating different internal mechanisms of narrowband detection, providing unique insights into the challenges in this research area, and giving rise to the prosperity of narrowband detection.
In recent years, cesium copper(I) halides have emerged
as a promising
candidate for photodetection applications due to their non-toxicity,
high quantum efficiency, and remarkable stability in open air. In
this study, the fabrication process was optimized with an annealing
treatment to achieve high-quality, pinhole-free CsCu2I3 films with excellent crystallinity. The CsCu2I3 photodetector (PD) exhibits an optimized UV detection performance
with high responsivity, specific detectivity, and external quantum
efficiency of 42 mA W–1, 1.1 × 1011 jones, and 12.26%, respectively. Moreover, the I
light/I
dark ratio can reach
7.5 × 105, and the rise/fall times were found to be
1.49/1.33 ms. In addition, the CsCu2I3 PD demonstrated
excellent working stability and retained its photoresponsivity even
after two months of storage in ambient air. The fabricated device
is also capable of performing UV imaging. These findings highlight
the great potential of lead-free CsCu2I3 PD
for next-generation UV optoelectronic systems.
Nowadays, halide perovskites have drawn extensive attention as active layers in the field of photodetectors (PDs) attributed to their optoelectric properties. However, the numerous defects in the prepared films and the lack of response in the near-infrared (NIR) range due to the intrinsic band gap limitation severely restrict the performances and applications of perovskite photodetectors. With this in mind, we introduced diethyl ether as a counter-solvent to improve the quality of the peroxide films. After comparison with chlorobenzene (CB), toluene (ToL), and ethyl acetate (EA), the mechanism by which diethyl ether (DE) as an antisolvent improves the quality of the films was explored. MAPbI 3 films and lead sulfide (PbS) quantum dots (QDs) were then combined to achieve a visible (VIS)−near-infrared response. The resultant PD, with the structure of ITO/NiO x / PbS QDs/MAPbI 3 /PC 61 BM/Ag, exhibits an ultrabroad response from 300 to 1100 nm and presents high detectivity reaching 5.6 × 10 11 and 6.5 × 10 10 Jones in the VIS and NIR regions, respectively. The fast response time in the microsecond range and the response bandwidth of 10 kHz (f −3 dB ) are comparable or even superior to counterparts. In addition, this approach provides ideas for the development of high-performance broadband perovskite-based optoelectronic devices.
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