In recent years, cesium copper(I) halides have emerged
as a promising
candidate for photodetection applications due to their non-toxicity,
high quantum efficiency, and remarkable stability in open air. In
this study, the fabrication process was optimized with an annealing
treatment to achieve high-quality, pinhole-free CsCu2I3 films with excellent crystallinity. The CsCu2I3 photodetector (PD) exhibits an optimized UV detection performance
with high responsivity, specific detectivity, and external quantum
efficiency of 42 mA W–1, 1.1 × 1011 jones, and 12.26%, respectively. Moreover, the I
light/I
dark ratio can reach
7.5 × 105, and the rise/fall times were found to be
1.49/1.33 ms. In addition, the CsCu2I3 PD demonstrated
excellent working stability and retained its photoresponsivity even
after two months of storage in ambient air. The fabricated device
is also capable of performing UV imaging. These findings highlight
the great potential of lead-free CsCu2I3 PD
for next-generation UV optoelectronic systems.
Nowadays, halide perovskites have drawn extensive attention as active layers in the field of photodetectors (PDs) attributed to their optoelectric properties. However, the numerous defects in the prepared films and the lack of response in the near-infrared (NIR) range due to the intrinsic band gap limitation severely restrict the performances and applications of perovskite photodetectors. With this in mind, we introduced diethyl ether as a counter-solvent to improve the quality of the peroxide films. After comparison with chlorobenzene (CB), toluene (ToL), and ethyl acetate (EA), the mechanism by which diethyl ether (DE) as an antisolvent improves the quality of the films was explored. MAPbI 3 films and lead sulfide (PbS) quantum dots (QDs) were then combined to achieve a visible (VIS)−near-infrared response. The resultant PD, with the structure of ITO/NiO x / PbS QDs/MAPbI 3 /PC 61 BM/Ag, exhibits an ultrabroad response from 300 to 1100 nm and presents high detectivity reaching 5.6 × 10 11 and 6.5 × 10 10 Jones in the VIS and NIR regions, respectively. The fast response time in the microsecond range and the response bandwidth of 10 kHz (f −3 dB ) are comparable or even superior to counterparts. In addition, this approach provides ideas for the development of high-performance broadband perovskite-based optoelectronic devices.
Various spectral bands provide different types of information, and information enhancement could be achieved by selective fusion of different spectral bands. The fused solar-blind Ultraviolet (UV)/Visible (VIS) bi-spectral sensing and imaging can provide the precise location of UV targets in virtue of VIS background, which has been increasingly promoted. However, most reported UV/VIS bi-spectral photodetectors (PDs) only have one single channel towards a broadband spectrum of both UV and VIS light, which cannot distinguish two kinds of signals, hindering the image fusion of bi-spectral signals. This work demonstrates the solar-blind UV/VIS bi-spectral PD based on vertically stacking perovskite of MAPbI3 and ternary oxide of ZnGa2O4 with independent and distinct response toward solar-blind UV and VIS light in a single pixel. The PD exhibits excellent sensing properties with an Ion/Ioff ratio of >10^7 and 10^2, detectivity of >10^10 and 10^8 Jones, and response decay time of 90 μs and 16 ms for VIS and UV channels, respectively. The successful fusion of VIS and UV images suggests that our bi-spectral PD can be applied in the accurate identification of corona discharge and fire detection.
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