Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

Abstract

GaSb-based 2.4 𝜇m InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-𝜇m-wide 1-mm-long cavity is 28 mW, and the threshold current density is 400 A/cm 2 under continuous wave operation mode at room temperature.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

“…The undoped active layer consists of 20 nm/10 nm three pairs of In 0.2 Ga 0.8 Sb/Al 0.4 Ga 0.6 As 0.02 Sb 0.98 quantum wells (QWs) with a compressive strain of 1.0% located in the central part of an undoped 400-nm Al 0.4 Ga 0.6 As 0.02 Sb 0.98 waveguide layer. [4] The upper cladding layer is composed of pdoped Al 0.9 Ga 0.1 As 0.02 Sb 0.98 layer with a thickness of 1.5 µm followed by a 250-nm highly doped GaSb contact layer for achieving a good Ohm contact with the p-side electrode mental. The design of our LC-DFB lasers is based on the effective coupling coefficient, the modal effective refractive index of the unperturbed ridge laser is numerically calculated by using a full-vector finite-difference calculation.…”

“…Many industrial and harmful gaseous byproducts such as CO, HF, CO 2 and H 2 O have strong absorption features in the wavelength range between 1.9 µm and 5 µm which is fully covered by GaSb-based laser diode. [4][5][6] For designing a lidar system for gas sensing, a tunable diode laser absorption spectroscopy (TD-LAS) laser with narrow linewidth is particularly important, which has been reported in previous literature. [1,7,8] GaSb-based Fabry-Perot (FP) laser exhibits mode hops and is inapplicable for this kind of application.…”

Research on beam quality control technology of 2 μm antimonide semiconductor laser

“…In 2010, Niu et al achieved a 2 μm laser output at room temperature for the first time using an F-P cavity [10]. Subsequently, the wavelength of the output laser was extended to 2.4 μm [11], and the output power was further increased to 1.4 W [12]. In 2011, Reboul et al reported a GaSb-based semiconductor laser output in the 2 μm band [13].…”

Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

“…InGaAsSb/AlGaAsSb quaternary quantum well systems have recently become increasingly prominent due to their potential application as semiconductor diode lasers emitting at wavelengths of around 2 µm, which are in high demand for a variety of applications, including fire detection, infrared imaging sensors, molecular spectroscopy and low loss optical fiber communications [1][2][3][4]. However, the high threshold current density, strongly temperature sensitive 2 µm InGaAsSb/AlGaAsSb LDs caused by Auger recombination rates at the MQW active region and large carrier leakage losses in cladding layers remain a great challenge [5,6]. In order to solve this problem, more attention is now focused on the improvement of molecular beam epitaxy(MBE) fabrication technology of antimonide LDs, but the reports about optimization for the structure of 2 µm InGaAsSb/AlGaAsSb LDs are rare.…”