2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

Yang, Cheng-Ao; Liu, Yongping; Xing, Jun-Liang; Wei, Sihang; Zhang, Lichun; Xu, Yingqiang; Ni, Haiqiao; Niu, Zhichuan

doi:10.1088/1674-1056/25/2/024204

Cited by 9 publications

(3 citation statements)

References 25 publications

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“…Referring to the coupling principle of LC-DFB, it is well known that the proximity of the gratings to the ridge is a key factor that greatly influences the laser performance [ 20 ]. In the fabrication process, after the ridge waveguide is first defined, the sample for electron-beam lithography (EBL) has a height difference with respect to the waveguide, and the photoresist will stack aside the sidewall during EBL, which makes it difficult to make the formation of grating adjacent to the ridge.…”

Section: Methodsmentioning

confidence: 99%

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Huang

Ning

et al. 2018

Nanoscale Res Lett

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In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.

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Section: Methodsmentioning

confidence: 99%

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Huang

Ning

et al. 2018

Nanoscale Res Lett

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“…The wafer then was processed into 2-mm-long, 100-µm-wide stripe chips with standard contact optical lithography in combination with etching process. [7] 250 nm SiO 2 was deposited to be used as insulation after the 2 µm ridge was etched. The wafer was thinned to 130 nm.…”

Section: Device Designmentioning

confidence: 99%

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

et al. 2019

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InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 µm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-µm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A. 19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature (T 0 ) is up to 140 • C near room temperature (25-55 • C).

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“…[1][2][3][4] Therefore, some applications can be served by optoelectronic devices operating in this band, such as environmental monitoring, free space communication, biotechnology, infrared radars, material processing, etc. [5][6][7] At present, a laser operating at 2 µm can be acquired by solid-state and fiber lasers doped with Tm 3+ and Ho 3+ and GaSb-based laser diodes. [8][9][10] The technology of the traditional semiconductor diode laser is quite mature, and is capable of generating high power laser output efficiently and reliably.…”

Section: Introductionmentioning

confidence: 99%

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

Shang¹,

Feng²,

Yang³

et al. 2019

Chinese Phys. B

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The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 µm in an external cavity configuration are reported. The high quality epitaxial structure, grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector (DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 µm wavelength operating near room temperature was achieved using a 3% output coupler.

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2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

Cited by 9 publications

References 25 publications

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

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