High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

Xie, S.; Zhang, Yu; Yang, Cheng′ao; Huang, Siyi; Yuan, Y.; Zhang, Yi; Shang, Jian Ku; Shao, Fuhui; Xu, Yingqiang; Ni, Haiqiao; Niu, Zhichuan

doi:10.1088/1674-1056/28/1/014208

Cited by 13 publications

(9 citation statements)

References 14 publications

(16 reference statements)

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“…In 2010, Niu et al achieved a 2 μm laser output at room temperature for the first time using an F-P cavity [10]. Subsequently, the wavelength of the output laser was extended to 2.4 μm [11], and the output power was further increased to 1.4 W [12]. In 2011, Reboul et al reported a GaSb-based semiconductor laser output in the 2 μm band [13].…”

Section: Introductionmentioning

confidence: 99%

“…In 2016, Hosoda et al reported a high-power cascaded antimonide semiconductor laser that achieved a continuous-light laser output with an average power of 2 W at room temperature [15]. In recent years, Niu Zhichuan's team at the Chinese Academy of Sciences has also achieved a series of research results in antimonide semiconductor lasers [12,16,17].…”

Section: Introductionmentioning

confidence: 99%

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Research on beam quality control technology of 2 μm antimonide semiconductor laser

Zhang

Cheng³

et al. 2022

Front. Phys.

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Antimonide semiconductor laser is a new type of laser with unique advantages in the 2 μm band. However, employing FP cavities causes multiple transverse modes to degrade beam quality despite achieving higher power output. In this paper, an antimonide semiconductor laser operating in 2 μm band is realized by utilizing fiber coupling and combining. Fiber combining results in higher output power, while the uniform patterns in both near-field and far-field are obtained, and the beam quality is improved. The experimental results illustrate that the output power reaches 1.2 W after 7-channel beam combination, and the near-field distribution is approximately Gaussian, while the far-field distribution is a flat-top.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research on beam quality control technology of 2 μm antimonide semiconductor laser

Zhang

Cheng³

et al. 2022

Front. Phys.

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“…Among these mid-IR diode lasers, GaSb alloys are the most promising material systems [ 3 – 5 ]. In fact, GaSb-based broad area (BA) lasers operating in the 2 m wavelength region have been reported with a maximum output power near 2 W [ 1 , 6 , 7 ]. Nonetheless, relatively few studies have focused on the development of narrow RW GaSb-based lasers with single-transverse-mode emission.…”

Section: Introductionmentioning

confidence: 99%

Promotion of Specific Single-Transverse-Mode Beam Characteristics for GaSb-Based Narrow Ridge Waveguide Lasers via Customized Parameter Design

et al. 2022

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GaSb-based single-transverse-mode narrow ridge waveguide (RW) lasers with high power and simultaneous good beam quality have broad application prospects in the mid-infrared wavelength region. Yet its design and formation have not been investigated systematically, while the beam characteristics that affect their suitability for specific applications remain rarely analyzed and optimized. The present work addresses these issues by theoretically establishing a waveguide parameter domain that generalizes the overall possible combinations of ridge widths and etch depths that support single-transverse-mode operation for GaSb-based RW lasers. These results are applied to develop two distinct and representative waveguide designs derived from two proposed major optimization routes of model gain expansion and index-guiding enhancement. The designs were evaluated experimentally based on prototype 1-mm cavity-length RW lasers in the 1950 nm wavelength range, which were fabricated with waveguides having perpendicular ridge and smooth side-walls realized through optimized dry etching conditions. The model gain expanded RW laser design with a relatively shallow-etched (i.e., 1.55 $$\upmu$$ μ m) and wide ridge (i.e., 7 $$\upmu$$ μ m) yielded the highest single-transverse-mode power to date of 258 mW with a narrow lateral divergence angle of 11.1$$^\circ$$ ∘ full width at half maximum at 800 mA under room-temperature continuous-wave operation, which offers promising prospects in pumping and coupling applications. Meanwhile, the index-guiding enhanced RW laser design with a relatively deeply etched (i.e., 2.05 $$\upmu$$ μ m) and narrow ridge (i.e., 4 $$\upmu$$ μ m) provided a highly stable and nearly astigmatism-free fundamental mode emission with an excellent beam quality of M$$^2$$ 2 factor around 1.5 over the entire operating current range, which is preferable for seeding external cavity applications and complex optical systems.

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“…Therefore, it is critical to investigate the thermal behavior of high-power lasers. Our group has made some progress in high power and high efficiency GaSb-based lasers in previous works [11][12][13] . In this paper, we demonstrate on fabrication of high-power GaSb-based lasers.…”

Section: Introductionmentioning

confidence: 99%

Thermal characterization of high-power GaSb-based laser

Shi

Yang

Chen

et al. 2022

Semiconductor Lasers and Applications XII

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High power mid-infrared GaSb-based lasers are desired for many applications, however, the self-heating in the active region is still one of the main influence factors for practical application. In this paper, we report on fabrication and characterization of high-power GaSb-based lasers. The temperature dependence of output performance of the device was investigated. Due to the high quality of epitaxy and wide waveguide design, the lasers exhibited a high-power capability from 288 K to 318 K. Devices with a cavity length of 1.5 mm and an aperture of 100 μm delivered a power of 1.46 W at a current of 7 A at 288 K and remains 1.10 W at 318 K under CW operation limited by thermal rollover. The characteristic temperature T0 is 151 K and 68 K below and above 298 K, respectively.

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High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

Cited by 13 publications

References 14 publications

Research on beam quality control technology of 2 μm antimonide semiconductor laser

Research on beam quality control technology of 2 μm antimonide semiconductor laser

Promotion of Specific Single-Transverse-Mode Beam Characteristics for GaSb-Based Narrow Ridge Waveguide Lasers via Customized Parameter Design

Thermal characterization of high-power GaSb-based laser

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