Research on beam quality control technology of 2 μm antimonide semiconductor laser

Abstract

Antimonide semiconductor laser is a new type of laser with unique advantages in the 2 μm band. However, employing FP cavities causes multiple transverse modes to degrade beam quality despite achieving higher power output. In this paper, an antimonide semiconductor laser operating in 2 μm band is realized by utilizing fiber coupling and combining. Fiber combining results in higher output power, while the uniform patterns in both near-field and far-field are obtained, and the beam quality is improved. The experimental results illustrate that the output power reaches 1.2 W after 7-channel beam combination, and the near-field distribution is approximately Gaussian, while the far-field distribution is a flat-top.