Room Temperature Nanoscale Ferroelectricity in Magnetoelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>GaFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Epitaxial Thin Films

Mukherjee, Somdutta; Roy, Amritendu; Auluck, S.; Prasad, R.; Gupta, Rajeev; Garg, Ashish

doi:10.1103/physrevlett.111.087601

Cited by 104 publications

(75 citation statements)

References 40 publications

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“…T he search for multiferroic materials combining electric and magnetic behaviours in a single phase has attracted a lot of attention from the perspective of designing new devices [1][2][3][4][5][6][7] and deepening our knowledge of materials and electromagnetism. One particularly important current research direction aims at the discovery of materials that possess electrical polarization and are ferromagnetic at room temperature.…”

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confidence: 99%

“…One particularly important current research direction aims at the discovery of materials that possess electrical polarization and are ferromagnetic at room temperature. Strikingly, it appears that these two desired features rarely coexist 4,6,8,9 . For instance, Bi 2 MnReO 6 and Bi 2 NiReO 6 have been predicted to exhibit an electrical polarization at room temperature, but both the Re and Ni/Mn sublattices adopt an antiferromagnetic order, therefore yielding a 'ferrimagnetic' rather than ferromagnetic overall ordering near 300 K (ref.…”

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confidence: 99%

“…Similarly, ferrimagnetism (or weak magnetization) instead of ferromagnetism occurs in other compounds possessing a room-temperature electrical polarization, and that is the case for GaFeO 3 (ref. 6), hexagonal LuFeO 3 epitaxial thin films 7 and the solid solutions formed by mixing lead zirconium titanate and lead iron tantalite perovskites 10 . In other words, systems exhibiting both a significant electrical polarization and a strong magnetization near room temperature are very scarce (as also consistent with refs 11,12).…”

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Near room-temperature multiferroic materials with tunable ferromagnetic and electrical properties

et al. 2014

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The quest for multiferroic materials with ferroelectric and ferromagnetic properties at room temperature continues to be fuelled by the promise of novel devices. Moreover, being able to tune the electrical polarization and the paramagnetic-to-ferromagnetic transition temperature constitutes another current research direction of fundamental and technological importance. Here we report on the first-principles-based prediction of a specific class of materialsnamely, R 2 NiMnO 6 /La 2 NiMnO 6 superlattices where R is a rare-earth ion-that exhibit an electrical polarization and strong ferromagnetic order near room temperature, and whose electrical and ferromagnetic properties can be tuned by means of chemical pressure and/or epitaxial strain. Analysis of the first-principles results naturally explains the origins of these highly desired features.

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Near room-temperature multiferroic materials with tunable ferromagnetic and electrical properties

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“…However it has a negligible effect when the field is applied parallel to the spontaneous polarization axis. Thin films of GaFeO 3 are reported to exhibit [20] ferroelectricity at room temperature, which makes them practically useful at the nano-level. We note also that the ball milling transforms [21] the structure of GaFeO 3 from orthorhombic to rhombohedral (R3c).…”

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Spin-phonon coupling, high-pressure phase transitions, and thermal expansion of multiferroicGaFeO3: A combined first principles and inelastic neutron scattering study

et al. 2014

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We have carried out an extensive phonon study on multiferroic GaFeO 3 to elucidate its dynamical behavior. Inelastic neutron scattering measurements are performed over a wide temperature range, 150 to 1198 K. First principles lattice dynamical calculations are done for the sake of the analysis and interpretation of the observations. The comparison of the phonon spectra from magnetic and nonmagnetic calculations highlights pronounced differences. The energy range of the vibrational atomistic contributions of the Fe and O ions are found to differ significantly in the two calculation types. Therefore, magnetism induced by the active spin degrees of freedom of Fe cations plays a key role in stabilizing the structure and dynamics of GaFeO 3 . Moreover, the computed enthalpy in various phases of GaFeO 3 is used to gain deeper insights into the high pressure phase stability of this material. Further, the volume dependence of the phonon spectra is used to determine its thermal expansion behavior.

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“…8,9 Investigation on origin of magnetoelectric coupling in bilayer and epitaxial films has been also reported. [10][11][12] The combined effect of MaxwellWagner effect and magnetoresistance resulted in to magnetodielectric response in manganites RMnO 3 . 13,14 Deconvolution of intrinsic film and extrinsic Maxwell-Wagner relaxation in BiMnO 3 and BiFeO 3 films were attained by fitting frequency dependent data to an adequate equivalent circuit model.…”

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Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

Shah

Kotnala

2014

Applied Physics Letters

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Thin film of BaTiO3 doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO3 substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm2 and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film in presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10−12 to 5.4 × 10−11 F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.

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Room Temperature Nanoscale Ferroelectricity in MagnetoelectricGaFeO3Epitaxial Thin Films

Abstract: We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric

Cited by 104 publications

References 40 publications

Near room-temperature multiferroic materials with tunable ferromagnetic and electrical properties

Near room-temperature multiferroic materials with tunable ferromagnetic and electrical properties

Spin-phonon coupling, high-pressure phase transitions, and thermal expansion of multiferroicGaFeO3: A combined first principles and inelastic neutron scattering study

Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

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