Articles you may be interested in Prediction of giant magnetoelectric effect in LaMnO3/BaTiO3/SrMnO3 superlattice: The role of n-type SrMnO3/LaMnO3 interface Coexistence of four resistance states and exchange bias in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junction Appl. Phys. Lett. 104, 043507 (2014); 10.1063/1.4863741 Prediction of ferroelectric stability and magnetoelectric effect of asymmetric multiferroic tunnel junctions Appl. Phys. Lett. 102, 152906 (2013); 10.1063/1.4801306 Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magneto-electric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO 3 /manga-nite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.5 Ca 0.5 MnO 3 /La 0.7 Sr 0.3 MnO 3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO 3 is ferroelectric and La 0.5 Ca 0.5 MnO 3 is close to ferromag-netic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface. V C 2015 AIP Publishing LLC.