After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μC/cm 2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

We investigate the variation in fracture strength of graphene with temperature, strain rate, and crack length using molecular dynamics ͑MD͒ simulations, kinetic analysis of fracture with a nonlinear elastic relation, and the quantized fracture mechanics theory. Young's modulus does not vary significantly with temperature until about 1200 K, beyond which the material becomes softer. Temperature plays a more important role in determining the fracture strength of graphene. Our studies suggest that graphene can be a strong material even, when subjected to variations in temperature, strain rate, and cracks.

The quest for multiferroic materials with ferroelectric and ferromagnetic properties at room temperature continues to be fuelled by the promise of novel devices. Moreover, being able to tune the electrical polarization and the paramagnetic-to-ferromagnetic transition temperature constitutes another current research direction of fundamental and technological importance. Here we report on the first-principles-based prediction of a specific class of materialsnamely, R 2 NiMnO 6 /La 2 NiMnO 6 superlattices where R is a rare-earth ion-that exhibit an electrical polarization and strong ferromagnetic order near room temperature, and whose electrical and ferromagnetic properties can be tuned by means of chemical pressure and/or epitaxial strain. Analysis of the first-principles results naturally explains the origins of these highly desired features.

We report a Raman scattering study of six rare earth orthoferrites RFeO3, with R = La, Sm, Eu, Gd, Tb, Dy. The use of extensive polarized Raman scattering of SmFeO3 and first-principles calculations enable the assignment of the observed phonon modes to vibrational symmetries and atomic displacements. The assignment of the spectra and their comparison throughout the whole series allows correlating the phonon modes with the orthorhombic structural distortions of RFeO3 perovskites. In particular, the positions of two specific Ag modes scale linearly with the two FeO6 octahedra tilt angles, allowing the distortion throughout the series. At variance with literature, we find that the two octahedra tilt angles scale differently with the vibration frequencies of their respective Ag modes. This behavior as well as the general relations between the tilt angles, the frequencies of the associated modes and the ionic radii are rationalized in a simple Landau model. The reported Raman spectra and associated phonon-mode assignment provide reference data for structural investigations of the whole series of orthoferrites.

Low frequency ultrasound (<1 MHz) has been demonstrated to be a promising approach for non-invasive neuro-stimulation. However, the focal width is limited to be half centimeter scale. Minimizing the stimulation region with higher frequency ultrasound will provide a great opportunity to expand its application. This study first time examines the feasibility of using high frequency (5 MHz) ultrasound to achieve neuro-stimulation in brain, and verifies the anatomical specificity of neuro-stimulation in vivo. 1 MHz and 5 MHz ultrasound stimulation were evaluated in the same group of mice. Electromyography (EMG) collected from tail muscles together with the motion response videos were analyzed for evaluating the stimulation effects. Our results indicate that 5 MHz ultrasound can successfully achieve neuro-stimulation. The equivalent diameter (ED) of the stimulation region with 5 MHz ultrasound (0.29 ± 0.08 mm) is significantly smaller than that with 1 MHz (0.83 ± 0.11 mm). The response latency of 5 MHz ultrasound (45 ± 31 ms) is also shorter than that of 1 MHz ultrasound (208 ± 111 ms). Consequently, high frequency (5 MHz) ultrasound can successfully activate the brain circuits in mice. It provides a smaller stimulation region, which offers improved anatomical specificity for neuro-stimulation in a non-invasive manner.

ABO3 perovskite oxides with magnetic A and B cations offer a unique playground to explore interactions involving two spin sublattices and the emergent effects they may drive. Of particular interest is the possibility of having magnetically driven improper ferroelectricity, as in the much studied families of rare-earth orthoferrites and orthochromites; yet, the mechanisms behind such effects remain to be understood in detail. Here we show that the strongest polar order corresponds to collinear spin configurations and is driven by non-relativistic exchange-strictive mechanisms. Our first-principles simulations reveal the dominant magnetostructural couplings underlying the observed ferroelectricity, including a striking magnetically driven piezoelectric effect. Further, we derive phenomenological and atomistic theories that describe such couplings in a generic perovskite lattice. This allows us to predict how the observed effects can be enhanced, and even how similar ones can be obtained in other perovskite families.

Detailed phonon scattering at an ideal Si-Ge interface is studied with a linear lattice dynamics model. Frequency dependent transmission coefficients indicate the significance of acoustic-optical phonon mode conversion at the interface. Applied to multiple interfaces, the method shows how the overall thermal resistance approaches a finite (Bloch mode) limit with the increasing number of interfaces in absence of other scattering mechanisms. The dependence of thermal resistance on the superlattice layer thickness is not significant even in the interface-scattering-only limit we study. We also assess errors incurred by the finite domain size and classical statistics in molecular dynamics simulations of interface thermal resistance. Results suggest that using 6 ϫ 6 unit cells in the transverse directions, a tractable size for such simulations, will incur only a 5% error in the predicted thermal resistance. Similarly, the error due to the classical (Boltzmann) phonon distribution in molecular dynamics simulations is predicted to be less than 10% for temperatures above 300 K.

Elastic phonon scattering at an atomically rough interface that separates two fcc lattice leads is computed via a Green's function method. Results are compared to specular and diffuse phonon scattering models, both of which are widely used in the numerical simulations of phonon Boltzmann transport equations. The shape of the discrete interface in the model is quantified by its spectral characteristics. It is found that the amplitude of the interface height fluctuations has strong influence on the effective interface specularity, while the effect of the two-point correlation length is minor. The average phonon transmission coefficient as well as the overall thermal resistance, however, is relatively insensitive to the interface roughness.