Room-Temperature MOCVD of Sb2Te3 Films and Solution Precipitation of M2Te3(M = Sb, Bi) Powders via a Novel N,N-Dimethylaminotrimethylsilane Elimination Reaction

Groshens, Thomas J.; Gedridge, R.W.; Lowe-Ma, Charlotte K.

doi:10.1021/cm00042a005

Cited by 37 publications

(24 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although GST225 has several promising properties as a feasible PCM, its relatively slow switching speed (program and erase time longer than 50 and 300 ns, respectively 1 ) has been identied as one of the problems of this material. 15 Metal-Organic Chemical Vapor Deposition (MOCVD) of Sb 2 Te 3 was reported by Groshens et al, 16 and further developed as an ALD process by Pore et al, [17][18][19][20] with introduction of appropriate precursors for ALD-type reactions. 2,3 Among these compositions, Sb 2 Te 3 is the most thermodynamically favored due to the stable +3 and À2 valence states of Sb and Te, respectively.…”

Section: Introductionmentioning

confidence: 99%

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films

et al. 2015

View full text Add to dashboard Cite

The chemical interaction between the [(CH 3 ) 3 Si] 3 Sb precursor and atomic layer deposited Sb 2 Te 3 thin films was examined at temperatures ranging from 70 to 220 C. The trimethylsilyl group [(CH 3 ) 3 Si] displays greater affinity for Te than for Sb, and this drives replacement of Te in the film with Sb from the [(CH 3 ) 3 Si] 3 Sb precursor, while eliminating volatile [(CH 3 ) 3 Si] 2 Te, especially at elevated temperatures. The compositions of the resulting Sb-Te layers lie on the Sb 2 Te 3 -Sb tie line. The incorporation behavior of [(CH 3 ) 3 Si] 3 Sb was explained in terms of a Lewis acid-base reaction. The exchange reactions occurred to relieve the unfavorable hard-soft Lewis acid-base pair between the trimethylsilyl group and Sb in [(CH 3 ) 3 Si] 3 Sb. Such a reaction could be usefully adopted to control the chemical composition of ternary Ge-Sb-Te thin films.

show abstract

Section: Introductionmentioning

confidence: 99%

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Metal organic chemical vapour deposition (MOCVD) is a promising technical alternative, which has been shown to produce crystalline Sb 2 Te 3 lms. [36][37][38][39][40][41][42][43][44] In MOCVD processes, trialkylstibines SbR 3 (R ¼ Me, Et) and dialkyltellanes TeR 2 0 (R ¼ Et, i-Pr, t-Bu) are typically used as molecular precursors. 45 Unfortunately, these precursors oen require high pyrolysis temperatures, forcing the incorporation of impurities such as carbon into the material lm.…”

Section: Introductionmentioning

confidence: 99%

Deposition of topological insulator Sb2Te3 films by an MOCVD process

Bendt

Zastrow²,

Nielsch³

et al. 2014

J. Mater. Chem. A

View full text Add to dashboard Cite

films were grown by a MOCVD process on Al 2 O 3 (0001) substrates at 400 C by use of i-Pr 3 Sb and Et 2 Te 2 and characterized by SEM, AFM, XRD, EDX and Auger spectroscopy. The electrical sheet resistivity was measured in the range of 4 to 400 K, showing a monotonic increase with increasing temperature. The valence band structure probed by angle-resolved photoemission shows the detailed dispersions of the bulk valence band and the topological surface state of a quality no less than for optimized bulk single crystals. The surface state dispersion gives a Dirac point roughly 30 meV above the Fermi level leading to hole doping and the presence of bulk valence states at the Fermi energy.

show abstract

“…New synthetic methods are being developed to form polycrystalline powder Bi 2 Te 3 . Groshens et al [8] described a low-temperature approach to Bi 2 Te 3 by means of an elimination reaction conducted in hexane at À30 C. Ritter et al [9] reported a room-temperature process of co-precipitation of bismuth telluride precursor (Bi 2 O 3 Á 3TeO Á xH 2 O) in aqueous media, then its hydrogen reduction to polycrystalline Bi 2 Te 3 . This group also found an unusual metal-organo complex method to synthesize finely powdered Bi 2 Te 3 [10].…”

Section: Introductionmentioning

confidence: 99%

Characterization of nanocrystalline bismuth telluride (Bi2Te3) synthesized by a hydrothermal method

Zhang

Luo

Wang

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Room-Temperature MOCVD of Sb2Te3 Films and Solution Precipitation of M2Te3(M = Sb, Bi) Powders via a Novel N,N-Dimethylaminotrimethylsilane Elimination Reaction

Cited by 37 publications

References 0 publications

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films

Deposition of topological insulator Sb2Te3 films by an MOCVD process

Characterization of nanocrystalline bismuth telluride (Bi2Te3) synthesized by a hydrothermal method

Contact Info

Product

Resources

About

Room-Temperature MOCVD of Sb2Te3 Films and Solution Precipitation of M2Te3(M = Sb, Bi) Powders via a Novel N,N-Dimethylaminotrimethylsilane Elimination Reaction

Cited by 37 publications

References 0 publications

Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3films

Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3films

Deposition of topological insulator Sb2Te3 films by an MOCVD process

Characterization of nanocrystalline bismuth telluride (Bi2Te3) synthesized by a hydrothermal method

Contact Info

Product

Resources

About

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films

Chemical interaction and ligand exchange between a [(CH₃)₃Si]₃Sb precursor and atomic layer deposited Sb₂Te₃films