Room-Temperature Laser Emission of ZnO Nanowires Explained by Many-Body Theory

Versteegh, Marijn A. M.; Vanmaekelbergh, Daniël; Dijkhuis, J. I.

doi:10.1103/physrevlett.108.157402

Cited by 92 publications

(75 citation statements)

References 39 publications

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“…From the calculations, the carrier density, where the gain overcomes the losses in the bulk ZnO, was estimated to be n g ∼ 2.1 × 10 25 m 3 . This value is clearly larger than the Mott density (n Mott ∼ 1.5 × 10 24 m 3 ), 14 which is one of the criteria for distinguishing excited electronic states between excitonic and EHP states. The threshold carrier density n th (in m 3 ) was estimated from the excitation intensity and the following differential equation:…”

Section: Figmentioning

confidence: 92%

“…So far, as gain materials, many studies on UV ZnO lasers have also been reported in various micro-/nano-cavity structures, such as random structures, [1][2][3][4][5][6][7][8][9][10][11][12][13] Fabry-Perot cavities, [14][15][16][17] whispering-gallery-mode resonators. [18][19][20][21] Although, in most of these ZnO lasers, the gain from electron-hole plasma (EHP) recombination under high excitation intensity condition has typically been reported as the origin of the stimulated emission (photon lasing), 12,13 the lasing originated by excitonic recombination, so-called polariton/exciton lasers, has also been demonstrated in well-designed cavity structures at room temperature.…”

confidence: 99%

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Double threshold behavior in a resonance-controlled ZnO random laser

et al. 2017

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We observed unusual lasing characteristics, such as double thresholds and blue-shift of lasing peak, in a resonance-controlled ZnO random laser. From the analysis of lasing threshold carrier density, we found that the lasing at 1st and 2nd thresholds possibly arises from different mechanisms; the lasing at 1st threshold involves exciton recombination, whereas the lasing at 2nd threshold is caused by electron-hole plasma recombination, which is the typical origin of conventional random lasers. These phenomena are very similar to the transition from polariton lasing to photon lasing observed in a well-defined cavity laser

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Section: Figmentioning

confidence: 92%

confidence: 99%

Double threshold behavior in a resonance-controlled ZnO random laser

et al. 2017

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“…Any significant effect of the shape of the absorption profile can therefore be ruled out. Since laser oscillations are likely caused by the formation of an electron-hole plasma (EHP) at high pumping intensities in single CdS (and ZnO NWs as a comparable NW laser system) [14,16,27,17], the approximately 1.24 times higher absorption for parallel polarization supplies the semiconductor more efficiently with charge carriers. This is further accompanied by a red-shift of the gain profile at the same pumping powers due to band gap renormalization effects in the EHP [28].…”

Section: Resultsmentioning

confidence: 99%

Polarization features of optically pumped CdS nanowire lasers

Röder¹,

Ploss²,

Kriesch³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract. High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while the nanowire emission was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized parallel to the nanowire axis. This polarization dependence was observed both above the lasing threshold and in the regime of amplified spontaneous emission. Measured Stokes parameters of the nanowire emission reveal that due to the onset of lasing the degree of polarization rapidly increases from approximately 15% to 85 %. Both, Stokes parameters and degree of polarization of the nanowire lasing emission are independent of the excitation polarization.

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“…Furthermore, every resonance corresponds to a bound state and we find that the last resonance occurs at the Mott-density n M 2.3 × 10 24 m −3 . Densities up to two orders of magnitude above the Mott density are readily obtainable below the damage threshold of ZnO, in bulk as well as nanowire samples [27,31]. For carrier densities that are larger than the Mott density, the scattering length always remains negative.…”

Section: -4mentioning

confidence: 99%

Theory for Bose-Einstein condensation of light in nanofabricated semiconductor microcavities

et al. 2016

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We construct a theory for Bose-Einstein condensation of light in nano-fabricated semiconductor microcavities. We model the semiconductor by one conduction and one valence band which consist of electrons and holes that interact via a Coulomb interaction. Moreover, we incorporate screening effects by using a contact interaction with the scattering length for a Yukawa potential and describe in this manner the crossover from exciton gas to electron-hole plasma as we increase the excitation level of the semiconductor. We then show that the dynamics of the light in the microcavities is damped due to the coupling to the semiconductor. Furthermore, we demonstrate that on the electron-hole plasma side of the crossover, which is relevant for the Bose-Einstein condensation of light, this damping can be described by a single dimensionless damping parameter that depends on the external pumping. Hereafter, we propose to probe the superfluidity of light in these nanofabricated semiconductor microcavities by making use of the differences in the response in the normal or superfluid phase to a sudden rotation of the trap. In particular, we determine frequencies and damping of the scissors modes that are excited in this manner. Moreover, we show that a distinct signature of the dynamical Casimir effect can be observed in the density-density correlations of the excited light fluid.

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Room-Temperature Laser Emission of ZnO Nanowires Explained by Many-Body Theory

Cited by 92 publications

References 39 publications

Double threshold behavior in a resonance-controlled ZnO random laser

Double threshold behavior in a resonance-controlled ZnO random laser

Polarization features of optically pumped CdS nanowire lasers

Theory for Bose-Einstein condensation of light in nanofabricated semiconductor microcavities

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