Double threshold behavior in a resonance-controlled ZnO random laser

Niyuki, Ryo; Fujiwara, Hideki; Nakamura, Toshihiro; Ishikawa, Yoshie; Koshizaki, Naoto; Tsuji, Takeshi; Sasaki, Keiji

doi:10.1063/1.4974334

Cited by 23 publications

(16 citation statements)

References 38 publications

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“…On the other hand, we have been interested in random structures and their modal control for the practical applications such as light emitting devices, sensors, and light extracting/harvesting. For this purpose, several approaches for the control of random lasing modes had been proposed such as use of resonant scatterers [7][8][9][10][11], limiting excitation area [12,13], temperature control [14][15][16], tuning density of scatterers [17]. Among these approaches, it had been reported that changes in lasing modes were observed in random lasers fabricated on a soft substrate due to the structural changes induced by mechanically stretching the substrate [18][19][20], which has a merit of in situ tuning of lasing modes by adjusting the amount of bending or stretching the substrate.…”

Section: Introductionmentioning

confidence: 99%

White light induced photo-thermal switching in a graphene-flake-mixed ZnO nanoparticle random laser

2018

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We experimentally demonstrate lasing mode switching within a graphene-flake-mixed ZnO nanoparticle film, in which the lasing suppression is observed when white light is illuminated on the film. The similar changes are also observed by changing the temperature of the same sample (about 30°C increase form room temperature), while no lasing suppression is observed in a ZnO nanoparticle film without graphene flakes. In addition, we also observe that a thin glass substrate coated by a graphene-flake-mixed ZnO nanoparticle film shows a bend toward the film-coated side with increasing the white light intensity, due to the negative thermal expansion of graphene flakes. From these results, we consider that, beside the temperature dependent ZnO emission property, the photothermal response of graphene flakes is the dominant key for our observed lasing mode changes, in which the local structural change in a graphene-flake-mixed ZnO nanoparticle film would be induced by the white light absorption of graphene flakes. This study suggests the possibility to provide a method to remotely and non-invasively control and tune the lasing modes by external white light illumination.

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Section: Introductionmentioning

confidence: 99%

White light induced photo-thermal switching in a graphene-flake-mixed ZnO nanoparticle random laser

2018

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“…So far, only one or two out of these three lasing regimes have been reported for a given structure, independently of the material system examined [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] . Thresholds for the onset of photon lasing involving excitons have been reported as two orders of magnitude 11,12,16,18 or a factor two 19,20 greater with respect to that of polariton type.…”

mentioning

confidence: 99%

“…Thresholds for the onset of photon lasing involving excitons have been reported as two orders of magnitude 11,12,16,18 or a factor two 19,20 greater with respect to that of polariton type. The transition from photon lasing involving excitons to photon lasing involving an e-h plasma has been evidenced only recently in the emission from ZnO-based microcavity 27 . This shows that the actual relation between all three lasing regimes has still not been established.…”

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confidence: 99%

Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity

et al. 2019

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Lasing relies on light amplification in the active medium of an optical resonator. There are three lasing regimes in the emission from a quantum well coupled to a semiconductor microcavity. Polariton lasing in the strong light-matter coupling regime arises from the stimulated scattering of exciton-polaritons. Photon lasing in the weak coupling regime relies on either of two mechanisms: the stimulated recombination of excitons, or of an electron-hole plasma. So far, only one or two out of these three regimes have been reported for a given structure, independently of the material system studied. Here, we report on all three lasing regimes and provide evidence for a three-threshold behavior in the emission from a photonic trap in a Se/Te-based planar microcavity comprising a single CdSe/(Cd,Mg)Se quantum well. Our work establishes the so far unsettled relation between lasing regimes that differ by their light-matter coupling strength and degree of electron-hole Coulomb correlation.

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“…Random lasing [10] has been claimed to be fundamentally incompatible with polaritons. From recent research developments however it turns out that it is not yet clear whether random lasers are either pure photon lasers or pure polariton lasers, or whether they even have both characteristics at the same time [11]. Thresholds like in conventional lasers may be observed [12,13].…”

Section: Introductionmentioning

confidence: 99%

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

Lubatsch

Frank

2020

Applied Sciences

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We implement externally excited ZnO Mie resonators in a framework of a generalized Hubbard Hamiltonian to investigate the lifetimes of excitons and exciton-polaritons out of thermodynamical equilibrium. Our results are derived by a Floquet-Keldysh-Green's formalism with Dynamical Mean Field Theory (DMFT) and a second order iterative perturbation theory solver (IPT). We find that the Fano resonance which originates from coupling of the continuum of electronic density of states to the semiconductor Mie resonator yields polaritons with lifetimes between 0.6 ps and 1.45 ps. These results are compared to ZnO polariton lasers and to ZnO random lasers. We interpret the peaks of the exciton-polariton lifetimes in our results as a sign of gain narrowing which may lead to stable polariton lasing modes in the single excited ZnO Mie resonator. This form of gain may lead to polariton random lasing in an ensemble of ZnO Mie resonators in the non-equilibrium. PACS: 42.55.-f lasers; 71.10.-w theories and models of many-electron systems; 42.50.Hz strong-field excitation of optical transitions in quantum systems; multi-photon processes; dynamic Stark shift; 74.40+ Fluctuations; 03.75.Lm Tunneling, Josephson effect, Bose-Einstein condensates in periodic potentials, solitons, vortices, and topological excitations; 72.20.Ht high-field and nonlinear effects; 71.36.+c polaritons; 71.35.-y excitons and related phenomena; 42.55.Px semiconductor lasers, laser diodes; 89.75.-k complex systems

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Double threshold behavior in a resonance-controlled ZnO random laser

Cited by 23 publications

References 38 publications

White light induced photo-thermal switching in a graphene-flake-mixed ZnO nanoparticle random laser

White light induced photo-thermal switching in a graphene-flake-mixed ZnO nanoparticle random laser

Triple threshold lasing from a photonic trap in a Te/Se-based optical microcavity

Quantum Many-Body Theory for Exciton-Polaritons in Semiconductor Mie Resonators in the Non-Equilibrium

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