Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles

Yatskiv, Roman; Grym, Jan; Gladkov, P.; Černohorský, Ondřej; Vaniš, J.; Maixner, J.; Dickerson, James H.

doi:10.1016/j.sse.2015.10.011

Cited by 23 publications

(10 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For comparison, the ZnO seed layers were also deposited by electrophoretic deposition of a commercially available solution of ZnO nanoparticles dispersed in ethanol (supplied by Sigma-Aldrich). Full details of the electrophoretic deposition are described in our previous work [21]. The ZnO nanorods were grown on the seeded substrates by CBD synthesis in equimolar solution consisting of zinc nitrate hexahydrate (Zn(NO 3 ) 2 .6 H 2 O) and hexamethylenetetramine (C 6 H 12 N 4 ) from Sigma-Aldrich dissolved in deionized water.…”

Section: Methodsmentioning

confidence: 99%

“…It has been shown that the ZnO nanorods grown by CBD homoepitaxially nucleate on top of ZnO nanocrystals oriented along the polar c-axis [10]. When there is no requirement for the vertical orientation of the nanorod arrays, the seed layer can consist of randomly oriented nanoparticles deposited from colloidal solutions by dip coating or by electrophoretic deposition [20,21]. A great advantage of this approach is related to the fact that a heat treatment is not required.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods

et al. 2019

View full text Add to dashboard Cite

One dimensional ZnO nanostructures prepared by favorable and simple solution growth methods are at the forefront of this research. Vertically oriented ZnO nanorods with uniform physical properties require high-quality seed layers with a narrow size distribution of the crystallites, strong c-axis orientation, and low surface roughness and porosity. It has been shown that high quality seed layers can be prepared by the sol–gel process. The sol–gel process involves three essential steps: preparation of the sol, its deposition by dip coating, and thermal treatment comprising preheating and annealing. We put emphasis on the investigation of the heat treatment on the properties of the seed layers and on the vertical alignment of the nanorods. It was demonstrated that for the vertical alignment of the nanorods, the preheating step is crucial and that the temperatures reported in the literature have been too low. With higher preheating temperatures, conditions for the vertical alignment of the nanorods were achieved in both investigated annealing atmospheres in air and in argon.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods

et al. 2019

View full text Add to dashboard Cite

show abstract

“…The ZnO nanorods were grown on the seed layers by chemical bath deposition from equimolar aqueous solution consisting of 50 mM zinc nitrate hexahydrate and HMTA at 95 °C for 2 h . To improve structural and optical properties of the ZnO nanorods, the samples were heated at 600 °C in nitrogen atmosphere .…”

Section: Methodsmentioning

confidence: 99%

Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

Yatskiv

Tiagulskyi

Grym

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p–n junction is formed between a p‐type nanostructured seed layer deposited by sol–gel method on phosphorus doped Si substrates and an array of n‐type nanorods grown by chemical bath deposition. The p‐type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low‐temperature photoluminescence spectra. The p–n junction shows a high value of rectification ratio. Charge transport through the p‐n junction is discussed in terms of non‐ideal interface.

show abstract

“…There is no need for the deposition of a metal contact to measure the I–V characteristics; the graphite was contacted directly by a measuring probe inside a test chamber. Properties of the graphite contact deposited on different semiconductors were studied by several techniques, such as scanning electron microscopy, X‐ray diffraction, Raman spectroscopy, and were presented in our previous papers .…”

Section: Device Fabrication and Experimentsmentioning

confidence: 99%

Graphite/SiC junctions and their electrical characteristics

Yatskiv

Grym

2017

Phys. Status Solidi A

View full text Add to dashboard Cite

284 680 222 Current-voltage characteristics of rectifying graphite/SiC junctions are investigated in a wide temperature range. The main parameters of the diodes, the ideality factor, and the Schottky barrier height show strong temperature dependence.Such behavior is interpreted on the basis of standard thermionic emission theory assuming Gaussian distribution of the barrier heights due to inhomogeneity at the graphite/SiC interface.

show abstract

Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles

Cited by 23 publications

References 32 publications

Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods

Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods

Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

Graphite/SiC junctions and their electrical characteristics

Contact Info

Product

Resources

About