Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

Abstract

Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p–n junction is formed between a p‐type nanostructured seed layer deposited by sol–gel method on phosphorus doped Si substrates and an array of n‐type nanorods grown by chemical bath deposition. The p‐type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low‐temperature photoluminescence spectra. The p–n junction shows a high value of rectification ratio. Charge transport through the p‐n junction is discussed in terms of non‐ideal interface.

Influence of Surface Polarity on Optoelectronic Properties of PEDOT:PSS/ZnO Hybrid Heterojunctions

“…ZnO shows typical room temperature PL spectra with near‐band edge excitonic emission (NBE) in the UV region and broad deep‐level emission (DLE) in the visible region. [ 24 ] A detailed analysis of the PL spectra for different crystallographic orientations was presented in our previous work. [ 21 ] After the deposition of PEDOT:PSS on ZnO substrates, the qualitative picture of the PL spectra does not change; however, a significant decrease of the DLE was observed.…”

Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods

“…The DLE was composed of the orange luminescence at ~2.1 eV and of the green luminescence at ~2.47 eV. The origin of the orange emission band is generally attributed to different sources such as ionized oxygen interstitials or Li impurities [42][43][44]. The origin of the green luminescence was To prove the conclusions from other characterization techniques, the seed layers preheated at 400 • C and annealed in the air at 600 • C were further investigated by ACOM-TEM (ASTAR) ( Figure 6).…”

“…The DLE was composed of the orange luminescence at~2.1 eV and of the green luminescence at~2.47 eV. The origin of the orange emission band is generally attributed to different sources such as ionized oxygen interstitials or Li impurities [42][43][44]. The origin of the green luminescence was assigned to the transitions in which oxygen vacancies, oxygen interstitials, or extrinsic defects such as Cu are involved [45,46].…”

Characterization of Graphite/ZnO Schottky Barriers Formed on Polar and Nonpolar ZnO Surfaces

“…Figure shows a comparison of the PL spectra for a‐, m‐, and c‐plane ZnO substrates measured at identical conditions at room temperature. The PL spectra comprise an excitonic emission band (NBE) in the UV region and a broad composite band (DLE) in the visible region, which is typical for ZnO . As is presented in the inset in Figure , the broad band in the visible region is composed of the red luminescence at 1.9 eV (RL2), the yellow luminescence at 2.2 eV (YL2), and the green luminescence at 2.47 eV (GL4).…”