Graphite/SiC junctions and their electrical characteristics

Yatskiv, Roman; Grym, Jan

doi:10.1002/pssa.201700143

Cited by 5 publications

(2 citation statements)

References 32 publications

(39 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At higher forward voltages ( V > 0.5), the I – V characteristics deviate from exponential behavior due to the series resistance. The series resistance was calculated from the voltage dependence of the differential resistance of the diode under the forward bias (Rs[a‐, m‐plane] ≈0.2 kΩ; Rs[c‐plane] ≈2 kΩ) …”

Section: Resultsmentioning

confidence: 99%

Characterization of Graphite/ZnO Schottky Barriers Formed on Polar and Nonpolar ZnO Surfaces

Yatskiv

Tiagulskyi

Grym

2018

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The authors demonstrate that the electrical properties of Schottky junctions fabricated by the deposition of colloidal graphite strongly depend on the crystallographic orientation of the ZnO substrate. The current-voltage, capacitance-voltage, and impedance measurements indicate that near-ideal Schottky junctions form on c-plane, while on a-and m-plane the junctions are laterally inhomogeneous. This behavior is assigned to higher concentration of native point defects in the near-surface region of nonpolar ZnO substrates. The authors further present an extended equivalent circuit model, which corresponds to actual structure of the junctions, and sheds light on their electrical transport properties.

show abstract

Section: Resultsmentioning

confidence: 99%

Characterization of Graphite/ZnO Schottky Barriers Formed on Polar and Nonpolar ZnO Surfaces

Yatskiv

Tiagulskyi

Grym

2018

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…After each step, the substrate was rinsed in deionized water and dried with nitrogen. A backside ohmic contact was created by thermal evaporation of 150 nm of Ni and subsequently annealed at 950 °C for 10 min in Ar atmosphere [12].…”

Section: Experimental Methodsmentioning

confidence: 99%

ELECTRICAL PROPERTIES OF NANOROD-BASED ZnO/SiC HYBRID HETEROJUNCTIONS

Tiagulskyi¹,

Yatskiv²,

FAITOVÁ³

et al. 2020

NANOCON 2019 Conference Proeedings

View full text Add to dashboard Cite

ZnO nanorods have attracted increasing interest in recent years due to their potential in optoelectronic applications. The lack of p-type ZnO emphasizes the importance of rectifying junctions realized on other ptype materials. SiC is a good candidate to create hybrid heterojunctions with ZnO due to its wurtzite crystal structure and a small lattice and thermal mismatch. The ZnO/SiC heterojunctions have a potential to show intense UV electroluminescence. We investigate morphology and electrical properties of a single verticallyoriented ZnO nanorod on a SiC substrate. The current-voltage measurements are performed directly in the vacuum chamber of a scanning electron microscope. The contact to a single nanorod is obtained by a nanoprobe, which allows for the measurement of the current-voltage characteristic of a single nanorod heterojunction of choice. The influence of ZnO growth parameters and post-growth treatment of ZnO/SiC structures are studied with the aim to minimize the density of structural/interfacial defects and to create lowdimensional hybrid heterojunctions with the potential to show intense UV electroluminescence.

show abstract