ZnO nanorods have attracted increasing interest in recent years due to their potential in optoelectronic applications. The lack of p-type ZnO emphasizes the importance of rectifying junctions realized on other ptype materials. SiC is a good candidate to create hybrid heterojunctions with ZnO due to its wurtzite crystal structure and a small lattice and thermal mismatch. The ZnO/SiC heterojunctions have a potential to show intense UV electroluminescence. We investigate morphology and electrical properties of a single verticallyoriented ZnO nanorod on a SiC substrate. The current-voltage measurements are performed directly in the vacuum chamber of a scanning electron microscope. The contact to a single nanorod is obtained by a nanoprobe, which allows for the measurement of the current-voltage characteristic of a single nanorod heterojunction of choice. The influence of ZnO growth parameters and post-growth treatment of ZnO/SiC structures are studied with the aim to minimize the density of structural/interfacial defects and to create lowdimensional hybrid heterojunctions with the potential to show intense UV electroluminescence.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.