Room-temperature epitaxial growth of GaN on conductive substrates

Abstract

We have grown GaN films on (Mn,Zn)Fe2O4 (111) substrates by pulsed-laser deposition at room temperature and investigated their structural properties using reflection high-energy electron diffraction, atomic force microscopy, grazing-incidence x-ray reflectivity, and grazing-incidence x-ray diffraction (GIXD). We have found that GaN (0001) grows epitaxially even at room temperature. The room-temperature growth of GaN starts with the two-dimensional mode followed by the three-dimensional mode, which indicates that the precursors of GaN have large energy enough to migrate on the surface. GIXD measurements showed that the in-plane epitaxial relationship is GaN [11-20] // (Mn,Zn)Fe2O4 [01-1] and approximately 90% of the lattice mismatch is released at the interface. These results indicate that the present technique solves one of the two major problems with epitaxial growth of GaN (mismatch in the thermal expansion coefficients) and alleviates the other problem (mismatch in the lattice constants).

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

“…In the early 2000s, a team at the University of Tokyo developed a low-temperature group III nitride growth process called pulsed sputtering (PS), and reported room-temperature growth of GaN, [ 23 ] AlN, [ 24 ] and InN [ 25 ] fi lms with high structural quality, as well as LED-compatible p-type GaN grown at 480 °C and annealed in N 2 at 450 °C. [ 26 ] They realized full LED structures using the PS system at temperatures in the range of 550-760 °C.…”

“…Visualized with permission. [ 23 ] Copyright 2003, AIP Publishing. c) InGaN/GaN LED structures on the AlN NL/graphene IL/SiO 2 fully deposited by the pulsed sputtering system.…”

Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition

“…Recently, we found that the use of pulsed laser deposition (PLD) makes it possible to grow epitaxial GaN and AlN films with abrupt heterointerfaces on chemically vulnerable materials at low-temperatures [6][7][8][9][10][11][12]. In fact, successful epitaxial growth of group III nitrides was demonstrated, even at room temperature [13][14][15]. In this paper, we report on the first PLD lowtemperature epitaxial growth of AlN on Cu(1 1 1) substrates that is quite promising for the production of FBARs, due to its high conductivity.…”

Characteristics of single crystalline AlN films grown on Ru(0001) substrates

“…However, it is known that the growth of single crystalline AlN on metal substrates using conventional epitaxial growth techniques such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) is very difficult due to the significant interfacial reactions between the AlN film and the metal electrodes at high growth temperatures above $800 1C. Recently, we found that the use of pulsed laser deposition (PLD) allows us to grow GaN [16][17][18]. In fact, successful epitaxial growth of group III nitrides was demonstrated even at room temperature [19,20].…”