Room temperature emission from CdSe∕ZnSSe∕MgS single quantum dots

Arians, R.; Kümmell, T.; Bacher, G.; Gust, A.; Kruse, C.; Hommel, D.

doi:10.1063/1.2710787

Cited by 42 publications

(29 citation statements)

References 23 publications

(19 reference statements)

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“…[30][31][32][33] For group-III-As/P heterostructures, which are treated in this work, the highest energy gaps can be realized by increasing the Al content of the barrier material, which is, among others, discussed in detail by Schulz et al 33 Based on these materials and heterostructures, detailed understanding of the carrier dynamics including the carrier transfer and thermal quenching mechanism of QD luminescence become inevitable. Innumerous study of thermal escape modeling has been investigated theoretically and experimentally so far in several publications.…”

Section: à2mentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra J. Appl. Phys. 113, 073502 (2013) Influence of structural anisotropy to anisotropic electron mobility in a-plane InN Appl. Phys. Lett. 102, 061904 (2013) Sub-250nm light emission and optical gain in AlGaN materials J. Appl. Phys. 113, 013106 (2013) Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1−xAs double heterostructure thin films under resonant and non-resonant probe conditions J. Appl. Phys. 113, 013514 (2013) Additional information on J. Appl. Phys.

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Section: à2mentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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“…3 Acousticphonon sidebands were observed in CdTe/ZnTe QDs, 1,4 InAs/GaAs QDs, 5 GaAs monolayer fluctuation QDs, 6 and CdSe QDs. 7 Exciton acoustic-phonon interactions have been treated theoretically considering both the deformation potential ͑DP͒ and piezoelectric ͑PZ͒ coupling mechanisms. 1,8,9 It was pointed out theoretically 10 and experimentally 1 that in small QDs the DP coupling mechanism dominates over PZ coupling.…”

mentioning

confidence: 99%

Piezoelectric exciton acoustic-phonon coupling in single quantum dots

et al. 2008

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Microphotoluminescence spectroscopy at variable temperature, excitation intensity, and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line ͓zero-phonon line ͑ZPL͔͒ exhibits a broad sideband due to exciton acoustic-phonon coupling by the deformation-potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton acoustic-phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers. DOI: 10.1103/PhysRevB.78.241305 PACS number͑s͒: 78.55.Cr, 78.67.Hc, 73.21.La, 63.20.kk Semiconductor quantum dots ͑QDs͒ are promising candidates for optical devices, both for traditional and for quantum information applications. The knowledge of interactions of confined carriers with the environment is of fundamental importance for the device operation because they determine the optical efficiency on one hand and the coherence properties on the other. Phase coherence can be lost either by relaxation processes, namely, radiative and phonon-assisted recombination, or by coupling to acoustic phonons ͑pure dephasing͒. The former produces a broadening of the Lorentzian zero-phonon line ͑ZPL͒. Coupling to acoustic phonons gives rise to non-Lorentzian sidebands. 1Temperature induced broadening of the ZPL associated to exciton-phonon scattering was reported for natural QDs in a GaAs quantum well 2 and CdSe/ZnCdSe QDs. 3 Acousticphonon sidebands were observed in CdTe/ZnTe QDs, 1,4 InAs/GaAs QDs, 5 GaAs monolayer fluctuation QDs, 6 and CdSe QDs. Exciton acoustic-phonon interactions have been treated theoretically considering both the deformation potential ͑DP͒ and piezoelectric ͑PZ͒ coupling mechanisms. 1,8,9 It was pointed out theoretically 10 and experimentally 1 that in small QDs the DP coupling mechanism dominates over PZ coupling. However, effects related to piezoelectricity in QDs are still under investigation, as they are very sensible to QD geometry, size, and composition. [11][12][13][14] In this work we performed microphotoluminescence ͑micro-PL͒ spectroscopy on a single InAs/AlAs QD and measured the influence of temperature, excitation power, and excitation energy on the emission spectra. Besides a broad acoustic-phonon sideband, similar to previously reported ones originating from DP coupling 1,4-7 we observe a narrow low-energy sideband and show that it originates from the PZ exciton coupling to long-wavelength acoustic phonons. This interpretation is supported by the strong reduction in the PZ sidebands observed on increasing excitation power, as a consequence of screening by the photocreated carriers.The sample was grown by molecular-beam epitaxy and self-assembly of InAs dots between 20 nm thick AlAs...

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“…Furthermore, QDs being formed on base of these material systems are characterized by the high temperature stability of their emission making them good candidates for operation at elevated temperatures. In the II-VI system emitting in the green spectral region, single-photon emission of CdSe QDs up to 200 K [38] and a high quantum efficiency for CdSe QDs with MgS barriers up to room temperature [60] as well as a green QD laser [61] have been demonstrated. Moreover, the larger oscillator strengths of the II-VIbased QDs make them promising to achieve the control of the light-matter interaction at elevated temperatures.…”

Section: Epitaxial Growthmentioning

confidence: 99%

“…Such measurements are presented for CdSe QDs embedded into additional MgS barriers. These QDs are known for their high quantum efficiency at elevated temperature [60]. Figure 19(a) shows µPL spectra of a 830 nm pillar for temperatures between 50 K and 290 K. The FM of the MC is observed as the Lorentzian shaped resonance at E = 2.24 eV at 50 K. The dominant part of the PL detected on the position of the FM probably originates from a weak continuous background present due to coupling of spectrally neighboring QDs to phonons [54,38].…”

Section: Increasing Energymentioning

confidence: 99%

Properties and prospects of blue–green emitting II–VI‐based monolithic microcavities

Sebald

Kruse

Wiersig

2009

Physica Status Solidi (b)

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1 Introduction In the last years new ways to manipulate the light-matter interaction were found by modifying photonic components which confine light on the wavelength scale by means of semiconductor microcavities (MCs) [1]. The modified optical density of states produced by photonic structuring allows emission and absorption rates to be enhanced or suppressed. This is known as the Purcell effect which can be used to control the spontaneous emission [2]. Semiconductor MCs appear to a be highly attractive systems for the realization of a new generation of optoelectronic devices, polariton devices, optical switches and spin-memory elements. Several types of solid state MCs [1], including micropillars [3,4], microdisks [5,6] and photonic crystals [7,8], offer very small mode volumes V in combination with high quality factors Q. These factors describe the ability of the cavity to confine the light.

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Room temperature emission from CdSe∕ZnSSe∕MgS single quantum dots

Cited by 42 publications

References 23 publications

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Piezoelectric exciton acoustic-phonon coupling in single quantum dots

Properties and prospects of blue–green emitting II–VI‐based monolithic microcavities

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