Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon

Gusev, O. B.; Kuznetsov, A. N.; Terukov, E. I.; Bresler, M. S.; Kudoyarova, V. Kh.; Yassievich, I. N.; Zakharchenya, B. P.; Fuhs, W.

doi:10.1063/1.118377

Cited by 39 publications

(8 citation statements)

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“…The power efficiency of the Er 3+ emission is by more than 2 orders of magnitude higher than that of previously prepared a-Si:H/c-Si heterojunctions [4] but still amounts to 3×10 -7 only. The main reason for this low value is the low probability of radiative transitions in a-Si:H at room temperature due to the presence of strong competing processes such as the nonradiative capture of electrons and holes by defects.…”

Section: Discussionmentioning

confidence: 74%

“…3 also shows the EL spectrum of an Al/a-Si:H(Er)/n-type c-Si/Al heterostructure [4] measured in the same apparatus (curve 2). The a-Si:H film in this structure was prepared by magnetron assisted silane decomposition and the Er doping was achieved by co-sputtering of metallic erbium.…”

Section: Resultsmentioning

confidence: 98%

“…uted to electron injection through a thin barrier, which in a sequence of trapping by defects and field emission transfer the energy to Er ions by an Auger process [4]. Curve 2 was measured at room temperature using a reverse current of 60 mA (J = 8 A/cm 2 ) and a reverse bias of 40 V. The total EL intensity is similar for both types of diodes but the contribution of the a-Si:H matrix to the EL spectrum is higher in the heterostructures and seems to extend down to photon energies below 0.7 eV (curve 2).…”

Section: Energy ( Ev )mentioning

confidence: 99%

“…Hydrogenated amorphous silicon (a-Si:H) appears to be a more favorable host than crystalline silicon, since the photoluminescence (PL) yield is higher and its thermal quenching is smaller in this disordered material [2,3]. So far Er-doped a-Si:H films mainly were prepared by sputtering techniques [2][3][4]. Although the defect density in these films is high and their transport properties are poor, heterojunctions with crystalline silicon (c-Si) could be fabricated with this material which, depending on the doping of the c-Si substrate, show Er-related electroluminescence (EL) either under reverse bias [4] or under forward bias [5].…”

Section: Introductionmentioning

confidence: 99%

“…So far Er-doped a-Si:H films mainly were prepared by sputtering techniques [2][3][4]. Although the defect density in these films is high and their transport properties are poor, heterojunctions with crystalline silicon (c-Si) could be fabricated with this material which, depending on the doping of the c-Si substrate, show Er-related electroluminescence (EL) either under reverse bias [4] or under forward bias [5]. Unfortunately, in these heterostructures efficient Er 3+ emission occurs only at very high voltages (> 30 V) and current densities.…”

Section: Introductionmentioning

confidence: 99%

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Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Mell

Weiser

Теруков

et al. 2004

phys. stat. sol. (c)

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We have fabricated erbium-doped amorphous silicon p-i-n structures by conventional plasma decomposition of silane. The erbium doping was achieved by sublimation of the metal-organic compound tris(2,4-pentanedionato)-Er(III) which has a more favorable erbium-carbon ratio than previously used compounds. Since the Er centers introduce donors and defects in the amorphous silicon, counterdoping with diborane has been required to obtain the near-intrinsic i layers with a reduced defect density. The p-i-n junctions have excellent diode characteristics and exhibit, under forward bias, pronounced electroluminescence near 1.54 µm at room temperature. Their power efficiency is by two orders of magnitude larger than that of previously fabricated heterojunctions of amorphous and crystalline silicon. We discuss possible mechanisms of the Er 3+ excitation in our diodes.

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Section: Discussionmentioning

confidence: 74%

Section: Resultsmentioning

confidence: 98%

Section: Energy ( Ev )mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Mell

Weiser

Теруков

et al. 2004

phys. stat. sol. (c)

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Photoluminescence of erbium ions in titanium oxide xerogel in porous anodic alumina matrices

et al. 2005

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It is shown that the structures of erbium-doped titanium oxide xerogel/porous anodic alumina manifest strong photoluminescence at 1.53 µm due to the 4 I 13/2 -4 I 15/2 transition of Er 3+ ions in the xerogel. In the titanium oxide xerogel, two phases -anatase and rutile -have been detected by the x-ray analysis method. The luminescence excitation spectrum of erbium at 1.53 µm consists of a set of lines that correspond to the intracenter transitions of Er 3+ ions with a maximum band at 524 nm caused by the 4 I 15/2 -2 H 11/2 transition. The lifetime of erbium in such structures is 1.8 msec.Introduction. The development of the optoelectronics and physics of a condensed state has been characterized by an increased interest, since the 1990s, in the formation of materials doped with optically active lanthanides owing to their wide interval of luminescence: UV region (Ce), visible region (Tb and Eu), and IR region (Er and Nd). Typical of the ions of lanthanides in oxide and semiconductor matrices is the intracenter luminescence between the 4f states. Owing to screening of the f shell by the outer s and p shells, the radiation wavelength of the ions of lanthanides is practically independent of the matrix material and temperature. In silicon, alumina, and semiconductors, for erbium in a trivalent state one observes photoluminescence at the 1.53-1.54-µm wavelength caused by the 4 I 13/2 → 4 I 15/2 transition [1]. At this wavelength, the losses during propagation of a light signal in fiber-optic communication lines are at minimum. It is thought that solid composites doped with lanthanides may create an alternative for light-emitting organic polymers [2], heterostructures [3][4][5], nanocrystals [6], and other materials with quantum-dimensional effects, overlapping a wide optical range and being advantageously distinguished for their high stability and low cost.The possibility of incorporation of an optically active impurity into silicon allows one to overcome physical limitations on light emission by this indirect gap semiconductor and make it very promising for creating a new elemental base in modern optoelectronics. The most widespread method of doping semiconductors and oxide films is ion implantation. However, the ion implantation of lanthanides has some drawbacks. In particular, formation of radiationinduced defects considerably reduces the intensity of the photoluminescence of implanted ions at the expense of the additional channels of radiationless recombination. The small mean free path of the ions of lanthanides in a solid body and the strong concentration quenching of luminescence do not allow one to create high concentrations of optically active ions. These factors and also strong temperature quenching of lanthanides in semiconductors have forced us to seek new technologies for the formation of films doped with optically active ions. Intense photo-and electroluminescence of erbium was discovered in amorphous hydrogenized silicon obtained by a magnetron-sputtering method [7,8] and also in porous silicon doped wit...

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Erbium in silicon and silicon-germanium

Evans–Freeman

Peaker

2001

Silicon-Based Material and Devices

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Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon

Cited by 39 publications

References 10 publications

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Erbium electroluminescence in forward‐biased amorphous silicon p‐i‐n diodes

Photoluminescence of erbium ions in titanium oxide xerogel in porous anodic alumina matrices

Erbium in silicon and silicon-germanium

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