Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation

Laux, Sven; Kaiser, Norbert; Zöller, A.; Götzelmann, R.; Lauth, Hans; Bernitzki, Helmut

doi:10.1016/s0040-6090(98)00861-x

Cited by 166 publications

(86 citation statements)

References 13 publications

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“…There is a good agreement between the refractive index found by the classical method and the refractive index given by the genetic algorithm (GA) method. The effective extinction factor k 0:015 is in accordance with values commonly found for commercially available ITO [35].…”

Section: Resultssupporting

confidence: 84%

Determination of refractive index, thickness, and the optical losses of thin films from prism-film coupling measurements

Cardin

Leduc²

2008

Appl. Opt.

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To cite this version:Julien Cardin, Dominique Leduc. Determination of refractive index, thickness, and the optical losses of thin films from prism-film coupling measurements. Applied optics, Optical Society of America, 2008, 47 (7) We present a method of analysis of prism-film coupler spectroscopy based on the use of transfer matrix and genetic algorithm, which allows the simultaneous determination of refractive index, thickness, and optical losses of the measured layer.

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Section: Resultssupporting

confidence: 84%

Determination of refractive index, thickness, and the optical losses of thin films from prism-film coupling measurements

Cardin

Leduc²

2008

Appl. Opt.

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“…3b). The calculated responses were based on experimentally measured dimensions, and the optical constants of all materials used in our devices were parameterized using literature values with no adjustable parameters [32][33][34] . We presented the responsivity spectra for devices with the same interslit distances as mentioned in Fig.…”

Section: Resultsmentioning

confidence: 99%

Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device

et al. 2013

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In gratings, incident light can couple strongly to plasmons propagating through periodically spaced slits in a metal film, resulting in a strong, resonant absorption whose frequency is determined by the nanostructure periodicity. When a grating is patterned on a silicon substrate, the absorption response can be combined with plasmon-induced hot electron photocurrent generation. This yields a photodetector with a strongly resonant, narrowband photocurrent response in the infrared, limited at low frequencies by the Schottky barrier, not the bandgap of silicon. Here we report a grating-based hot electron device with significantly larger photocurrent responsivity than previously reported antenna-based geometries. The grating geometry also enables more than three times narrower spectral response than observed for nanoantenna-based devices. This approach opens up the possibility of plasmonic sensors with direct electrical readout, such as an on-chip surface plasmon resonance detector driven at a single wavelength.

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“…4,5 In most applications the production of thin ITO films is necessary. For this purpose common methods of layer deposition such as evaporation of In 2 O 3 and SnO 2 powders [6][7][8][9][10][11][12] and ͑magnetron͒ dc-and rf-sputtering 2,[13][14][15][16][17][18][19] spray pyrolysis 1,5,20 are widely used. 21 Additionally some other methods of thin-film production have evolved.…”

Section: Introductionmentioning

confidence: 99%

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Günther¹,

Schierning²,

Theissmann³

et al. 2008

Journal of Applied Physics

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The correlation between defect structure, metal segregation, and electrical resistivity of indium-tin-oxide nanopowder upon treatment in reducing atmosphere was investigated. Morphology and defect structure have been investigated by in situ synchrotron x-ray diffraction and transmission electron microscopy, while traces of metallic indium have been detected by susceptibility measurements utilizing the superconducting properties of indium. With increasing treatment temperature under reforming gas the film resistivity decreases down to = 1.6 ϫ 10 −2 ⍀ cm at 330°C annealing temperature. For even higher treatment temperatures, the resistivity increases further. This is accompanied by extractions of metallic indium. Under forming gas, grain growth could be observed at 350°C, while in air grain growth starts at 650°C. Furthermore forming gas causes a lattice expansion of ITO which persists in oxygen, at least for several hours. The results are discussed with respect to results published in the literature.

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Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation

Cited by 166 publications

References 13 publications

Determination of refractive index, thickness, and the optical losses of thin films from prism-film coupling measurements

Determination of refractive index, thickness, and the optical losses of thin films from prism-film coupling measurements

Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

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