Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

Ismail, Muhammad; Ahmad, Asma Hayati; Akbar, Tahira; Rana, Anwar Manzoor; Lee, Jinju; Kim, Sungjun

doi:10.1016/j.apsusc.2019.04.013

Cited by 26 publications

(5 citation statements)

References 31 publications

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“…Under a constant read voltage of 0.2 V, the resistances in these five states show steady retention up to 10,000 s, indicating that the memristor has excellent data retention operation. 59,60 These five resistance states provide a one-of-a-kind chance to achieve multilevel memory in a single cell, boosting memory capacity and showing that the memristor has potential uses in high-density storage. The RS mechanism of a memristor is depicted in Figure 4d, which may be described as a steady increase in filament size by increasing current limitations during the set process.…”

Section: Resultsmentioning

confidence: 99%

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

Ismail

Mahata

Kwon

et al. 2022

ACS Appl. Electron. Mater.

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Due to their high data-storage capability, oxidebased memristors with controllable conductance properties have attracted great interest in electronic devices for high integration density and neuromorphic synapses. However, high switching uniformity and controllable conductance of memristors during the conversion from a low (ON-state) to a high resistance state (OFFstate) have become essential for their implementation in neural networks. In this study, we fabricate a Pt/HfO 2 /HfAlO x /TiN memristor incorporating atomic-layer-deposited HfO 2 /HfAlO x high-k dielectric thin films as the active material to achieve excellent resistive switching performance with negligible parameter dispersion, multilevel conductance, and neuromorphic synapses for artificial intelligence (AI) systems. This two-terminal memristor exhibits a forming-free switching behavior with outstanding direct current endurance cycles (10 3 ), a high current ON/OFF ratio of >130, stable retention (10 4 s), and multilevel ON-and OFF-state, respectively. Also, memristor conductance/resistance could be modulated through current limits in the set-switching and stop voltage during the reset process, which is useful to acquire a trustworthy analogue switching conduct to mimic the biological neuromorphic synapses. The diverse features of synapses, such as potentiation, depression, spike-rate-dependent plasticity, paired-pulsed facilitation, and spike-time-dependent plasticity, are successfully mimicked in the Pt/HfO 2 /HfAlO x /TiN memristor. Furthermore, the experimental potentiation and depression data are employed for image processing of 28 × 28 pixels comprising 200 synapses. In the Modified National Institute of Standards and Technology database (MNIST), handwritten numbers can be successfully trained to recognize 6000 input images with a training accuracy of about 80%. This Hf-Al-O alloy-based memristor may enable high-density storage memory and realize controllable resistance/weight alteration as a neuromorphic synapse for AI systems.

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Section: Resultsmentioning

confidence: 99%

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

Ismail

Mahata

Kwon

et al. 2022

ACS Appl. Electron. Mater.

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“…CeO 2 is a well-known MIT material for thin film devices which shows both bipolar and unipolar switching. [28][29][30][31][32] For example, a device made of 50 nm layer of CeO 2 with sequence of Ag-Ti-CeO 2 -Pt showed stable repeatable bipolar and unipolar RS. 32 In both switching types, the device maintained the new resistance state until rest voltage was applied (i.e.…”

Section: Discussionmentioning

confidence: 99%

“…the device has two stable states, ON and OFF state, in the absence of electrical field). In bipolar switching, the device switched to low resistance state at about +0.3 V and recovered its original state at about À 0.5 V. In many studies [28][29][30][31][32] such devices showed good endurance and retention in which the device can maintain the ON and OFF state up to 10 5 s.…”

Section: Discussionmentioning

confidence: 99%

Metal-insulator transition and resistive switching in Y-doped CeO₂ ceramics

Almutairi,

Alotaibi,

West

2023

Phys. Chem. Chem. Phys.

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“…We observed that by rationally designing the device structure of multiple layers, memristors could exhibit better and more diverse performance [27,28,33,35]. Compared to these studies [27][28][29][30][31][32][33][34], our study designed a Pt/Ti/AlO x /CeO x /Pt multilayer structure memristor that has a low working voltage and good working properties such as multivalued characteristics, neuroplasticity, and learning mechanism simulation. In this work, all characteristics of the Pt/Ti/AlO x /CeO x /Pt multilayer memristor were studied.…”

Section: Introductionmentioning

confidence: 96%

“…Hsieh et al reported on HfO x /CeO x bilayer memristors, which have forming-free, low-voltage, and analog characteristics [33]. In addition, Muhammad et al demonstrated multilevel bipolar resistive switching characteristics in Ni/CeO 2−x /ITO/ glass devices by controlling RESET voltage and current compliance [34]. However, the realization of both multivalue storage and use as an electronic synapse device based on the pulse voltage (less than 1 V in amplitude) of the CeO x multilayer film device has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

Wang

Zhao

Zhang

et al. 2022

Journal of Nanomaterials

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Due to their unique electrical performance and simple structure, memristors exhibit excellent application prospects for future information technology. In this work, we fabricated Pt/Ti/AlOx/CeOx/Pt memristors demonstrating electroforming-free bipolar resistive switching behavior with low operating voltage (−1 to 1 V), stable endurance, and retention. Space-charge limited conduction (SCLC) as well as the formation and rupture of conductive filaments are responsible for the resistive switching behavior. Increasing the magnitude of the RESET voltage could generate multistate resistive switching. We studied the synaptic characteristics of the device by obtaining multilevel conductance states and investigating the relationship between the device resistance, pulse amplitude, pulse width, and pulse number. By applying programmed pre and postsynaptic spiking pulses, spike-timing dependent plasticity was observed. This study shows that the device is suitable for multivalue storage and can be used as an electronic synapse device in artificial neural networks.

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Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

Cited by 26 publications

References 31 publications

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

Metal-insulator transition and resistive switching in Y-doped CeO₂ ceramics

Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

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Room temperature deposited oxygen-deficient CeO2− layer for multilevel resistive switching memory

Cited by 26 publications

References 31 publications

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

Metal-insulator transition and resistive switching in Y-doped CeO2 ceramics

Forming-Free Pt/Ti/AlOx/CeOx/Pt Multilayer Memristors with Multistate and Synaptic Characteristics

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Metal-insulator transition and resistive switching in Y-doped CeO₂ ceramics