Room temperature crystallization by RF plasma

Ohsaki, Hisashi; Shibayama, Y.; Suzuki, Motoyuki; Kinbara, Akira; Yashiro, H.; Watanabe, Toshiya

doi:10.1016/j.tsf.2007.06.015

Cited by 11 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the comparison with a nonetched ZnO:B surface, we have a feeling that no clear physical discontinuity due to grain boundary is even evident and, as a consequence, we could hypothesize that plasma treatment leads to a rearrangement of the grain boundary structure, giving a more ordered and less defected lattice up to a depth of only a few nanometers. 29,30 However, further investigations on this aspect would be useful to better characterize grain boundary modifications. In order to obtain higher sensitivity in terms of larger modification evidence of film surface structure, GIXRD measurements were collected on as-deposited and "2 minute Ar-etched" ZnO:B films having very thin thickness (about 40 nm).…”

Section: Resultsmentioning

confidence: 99%

“…A slowing down of each of the two above-mentioned mechanisms is able to decrease the diffusion rate. As a plasma treatment can modify chemical and structural properties of a layer up to a depth of only few nanometers, , we can exclude with a high probability that our RIE process on a ZnO:B surface would be able to change any bulk property such as the oxygen diffusion coefficient D , where both its value inside the crystalline grain and its value inside the grain boundary path would remain unchanged after plasma treatment. On the basis of this reasoning, we have to exclude any meaningful variation for the second migration step, and we have to concentrate our attention on the first migration step, that is, oxygen solubilization on the film surface according to the following redox reaction: O 2 (g) + 2e – = 2 O – (s) and/or H 2 O(g) + e – = O – (s) + H 2 (g) .…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced Electrical Stability of LP-MOCVD-Deposited ZnO:B Layers by Means of Plasma Etching Treatment

Addonizio

Antonaia

2013

J. Phys. Chem. C

View full text Add to dashboard Cite

Electrical properties of transparent conductive ZnO:B films, obtained by the low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique, were monitored during the given time, and a heavy worsening of these properties was observed. At the same time, other ZnO:B samples subjected to a post-deposition treatment by argon plasma etching showed an appreciable enhancement of the electrical stability in the given time. A degradation mechanism, involving formation of O– adsorbate and its diffusion inside the grain boundary, is proposed as responsible of the carrier mobility worsening. Furthermore, the beneficial effect of the plasma treatment is explained in terms of a rearrangement of the grain boundary with a decrease of positively charged defect density and, consequently, a slowing down of O– formation rate. Finally, argon plasma post-deposition treatment is proposed as an effective process for obtaining ZnO:B films with an appreciable electrical stability in the given time.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Enhanced Electrical Stability of LP-MOCVD-Deposited ZnO:B Layers by Means of Plasma Etching Treatment

Addonizio

Antonaia

2013

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…After H 2 plasma treatment, no change in the crystal structure is shown, but the (2 2 2) peak becomes stronger and new two peaks corresponding to (2 1 1) and (4 3 1) plane appeared, suggesting that the crystallinity of the film is improved. Ohasaki et al [9,10] reported that amorphous TiO 2 and ITO films were densified and simultaneously crystallized by the r.f. plasma treatment.…”

Section: Effects Of Hydrogen Plasma Treatmentmentioning

confidence: 99%

Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films

Lee

Lim

Yang

et al. 2011

Journal of Crystal Growth

View full text Add to dashboard Cite

“…PbI 2 is a building block of perovskite and moisture plays an important role in its crystallization [11,12]. Radiofrequency plasma [13] (RF) treatment developed by Osaki et al was used to crystalize ITO and Ti 2 O thin films that were prepared on polyethylene terephalate (PET) substrate by Direct Current (DC) magnetron sputtering method [14]. Miniemulsion (ME) technique was used by Gross group to obtain nanocrystalline CuS [15].…”

Section: Introductionmentioning

confidence: 99%

Inducing Crystallinity of Metal Thin Films with Weak Magnetic Fields without Thermal Annealing

et al. 2018

View full text Add to dashboard Cite

Since the discovery of thin films, it has been known that higher crystallinity demands higher temperatures, making the process inadequate for energy-efficient and environmentally friendly methods of thin film fabrication. We resolved this problem by sparking metal wires in a 0.4 Tesla magnetic field at ambient conditions under ultra-pure nitrogen flow to replace the annealing of thin films, and thus designed an environmentally friendly and energy-efficient thin film fabrication method. We employed grazing incidence X-Ray Diffraction spectroscopy to characterize crystallinity of Iron, Nickel, Copper and Tungsten thin films prepared by a sparking discharge process in the presence of 0.4 T magnetic field at an ambient temperature of 25 °C. Control experiment was conducted by sparking without a magnetic field present and using ultra-pure nitrogen flow and ambient air containing oxygen. The Iron thin film prepared in ultra-pure nitrogen flow preserved crystallinity even after one year of ageing. Nickel exhibited higher crystallinity when sparked in nitrogen gas flow than when sparked in atmospheric air and was the only element to crystalize under atmospheric air. Tungsten successfully crystalized after just 40 min of sparking and aluminium failed to crystalize at all, even after 12 h of sparking under nitrogen flow.

show abstract

Room temperature crystallization by RF plasma

Cited by 11 publications

References 12 publications

Enhanced Electrical Stability of LP-MOCVD-Deposited ZnO:B Layers by Means of Plasma Etching Treatment

Enhanced Electrical Stability of LP-MOCVD-Deposited ZnO:B Layers by Means of Plasma Etching Treatment

Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films

Inducing Crystallinity of Metal Thin Films with Weak Magnetic Fields without Thermal Annealing

Contact Info

Product

Resources

About