Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films

Lee, Jaehyung; Lim, Dong-Gun; Yang, Kea-Joon; Choi, Won Seok

doi:10.1016/j.jcrysgro.2011.01.050

Cited by 28 publications

(4 citation statements)

References 11 publications

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“…In the other parts of the catalyst islands, however, only small amounts of ITO components were detected. When ITO is hydrogen-plasma-treated at a certain (or higher) temperature, In 2 O 3 , a component of ITO, is reduced, and the crystals are destroyed [33,34]. In CNW growth, the H 2 -CH 4 mixture plasma is used, and the growth is made to proceed at a high temperature, so the ITO becomes partially destroyed.…”

Section: Structural Characteristicsmentioning

confidence: 99%

Adhesion-Increased Carbon Nanowalls for the Electrodes of Energy Storage Systems

et al. 2019

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Carbon nanowalls (CNWs), which are used as electrodes for secondary batteries in energy storage systems (ESSs), have the widest reaction surface area among the carbon-based nanomaterials, but their application is rare due to their low adhesion with substrates. Indium tin oxide (ITO), a representative transparent conducting oxide (TCO) material, is widely used as the electrode for displays, solar cells, etc. Titanium nitride (TiN) is a well-used material as an interlayer for improving the adhesion between two materials. In this study, ITO or TiN thin films were used as an interlayer to improve the adhesion between a CNW and a substrate. The interlayer was deposited on the substrate using a radio frequency (RF) magnetron sputtering system with a four-inch TiN or ITO target. CNWs were grown on the interlayer-coated substrate using a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system with a mixture of methane (CH 4 ) and hydrogen (H 2 ) gases. The adhesion of the CNW/interlayer/substrate structure was observed through ultrasonic cleaning.

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Section: Structural Characteristicsmentioning

confidence: 99%

Adhesion-Increased Carbon Nanowalls for the Electrodes of Energy Storage Systems

et al. 2019

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“…The Hagen-Rubens relation states emissivity of materials decreases when lowering their electrical resistivity [13]. Recent studies have shown that post treatment could reduce electrical resistivity and increase the visible transmission of ITO and/or AZO films [14][15][16][17][18][19]. The reduction of electrical resistivity of AZO for H 2 plasma treatment possibly results from desorption of oxygen from the grain boundary or the formation of a complex (such as Zn-H) [14][15][16].…”

Section: Ofmentioning

confidence: 99%

Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass

Chang

Chan

2019

Crystals

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Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/N2) plasma with different N2 flows. The structure and optical and electrical properties of AZO/ITO films were surveyed. Experiment results indicated that N2 flow in H2/N2 plasma annealing of AZO/ITO films slightly modified the structure and electrical properties of AZO/ITO films. The X-ray diffraction peak corresponding to zinc oxide (002) crystal plane slightly shifted to a higher angle and its full width at half maximum decreased as the N2 flow increased. The electrical resistivity and the emissivity reduced for the plasma annealed AZO/ITO films when the N2 flow was raised. The optimum H2/N2 gas flow was 100/100 for plasma annealed AZO/ITO films in this work for low emissivity application. The emissivity and average visible transmittance for H2/N2 = 100/100 plasma annealed AZO/ITO were 0.07 and 80%, respectively, lying in the range of commercially used low emissivity glass.

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“…[16] AZO electrodes still have the disadvantage of lower conductivity compared to ITO, so various methods are needed, such as thermal annealing and plasma treatment, to improve their performance. [17][18][19][20] However, the polymer substrate used to fabricate transparent and flexible electrodes can be easily deformed by thermal stress, which makes it difficult to use the thermal annealing method. [21] Plasma treatment, which can be used at relatively lower temperatures, is considered to be a good alternative to improve sheet resistance.…”

Section: Introductionmentioning

confidence: 99%

Selective Surface Treatment Using Atmospheric Ar Plasma Jet for Aluminum‐doped Zinc Oxide Based Transparent and Flexible Electronics

Lee,

Seo,

Kwon

et al. 2023

Adv Materials Inter

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Transparent and flexible electronics are emerging technologies with the potential to enable new applications. However, to ensure high‐performance transparent electronics, post‐processing such as thermal annealing and vacuum plasma treatment is necessary, which are difficult to apply to polymer‐based flexible substrates. This study analyzed the feasibility of applying selective Ar plasma jet treatment at atmospheric pressure to transparent flexible electronics. When atmospheric Ar plasma treatment is applied to transparent flexible aluminum‐doped zinc oxide (AZO), it showed a maximum 83.1% improvement in sheet resistance while maintaining a high transmittance performance, of over 70%. To verify the mechanism behind the surface treatment effect using atmospheric Ar plasma, comprehensive analyses are performed using atomic force microscopy, X‐ray diffraction, and X‐ray photoelectron spectroscopy, which confirmed that the effect is due to oxygen vacancy formation caused by ion bombardment and thermal diffusion. The application of atmospheric plasma treatment to a patterned transparent flexible AZO device resulted in a reduction in contact resistance, and it is confirmed that the performance improvement effects can be retained for >500 h by applying additional passivation.

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Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films

Cited by 28 publications

References 11 publications

Adhesion-Increased Carbon Nanowalls for the Electrodes of Energy Storage Systems

Adhesion-Increased Carbon Nanowalls for the Electrodes of Energy Storage Systems

Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass

Selective Surface Treatment Using Atmospheric Ar Plasma Jet for Aluminum‐doped Zinc Oxide Based Transparent and Flexible Electronics

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