2019
DOI: 10.3390/cryst9060310
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Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass

Abstract: Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/… Show more

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Cited by 6 publications
(1 citation statement)
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“…An entirely different perspective on thin film oxides is presented by Chang and Chan. In their paper, [9], they investigated the heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) for low emissivity glass (low-e glass), which is often used in energy-saving buildings. The emissivity and average visible transmittance for H 2 /N 2 = 100/100 plasma annealed AZO/ITO were 0.07% and 80%, respectively, lying in the range of commercially used low emissivity glass.…”
mentioning
confidence: 99%
“…An entirely different perspective on thin film oxides is presented by Chang and Chan. In their paper, [9], they investigated the heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) for low emissivity glass (low-e glass), which is often used in energy-saving buildings. The emissivity and average visible transmittance for H 2 /N 2 = 100/100 plasma annealed AZO/ITO were 0.07% and 80%, respectively, lying in the range of commercially used low emissivity glass.…”
mentioning
confidence: 99%