Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

Abstract

We report on the InAs quantum dots (QDs) laser in the 1.55μm wavelength region grown by gas source molecular-beam epitaxy. The active region of the laser structure consists of fivefold-stacked InAs QD layers embedded in the InGaAsP layer. Ridge waveguide lasers were processed and continuous-wave mode operation was achieved between 20 and 70°C, with characteristic temperature of 69K. High internal quantum efficiency (56%) and low infinite length threshold current density (128A∕cm2 per QD layer) was obtained for the as-cleaved devices at room temperature. The lasing wavelength range between 1.556 and 1.605μm can be covered by varying the laser cavity length.

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

“…The first demonstration of the electrically injected InAs/InGaAsP/(100)-InP Qdots laser at low temperature (77 K) was reported on CBE system [118] followed by room temperature operation in both pulsed [119] and CW [120,121] Benefiting from the optimized MOCVD growth process, including reduced As flow rate during Qdots growth and utilization of GaAs interlayer, the Qdots uniformity and emission in a multi-stack structure was maintained due to suppression of As/P exchange. On the other hand, MBE grown optimized Qdots laser showed a threshold current density of 790 A/cm 2 (158 A/cm 2 per layer) [71], large temperature stability with T 0 of 69 K (20-70ºC) [123], high wavelength stability of 0.08 nm/K (80-310 K) [124], and lasing around ~1.55 µ m to ~1.65µm. A small LEF of ~1.4-1.6 above threshold and < 1 below threshold, was measured recently by Jiao et al [125] which is half the value reported by Lelarge et al (~2.2 below threshold) [121], and the Qdots exhibited better uniformity with PL linewidth 63 meV at room temperature.…”

Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots

“…[1][2][3] The envisioned devices such as cavity enhanced single and entangled photon sources 4,5 require precise site control of the QDs. This has been achieved by growth on truncated pyramids, [6][7][8] in V-grooves, 4,9 and nanoholes 10,11 for InAs/ GaAs and InAs/InP QDs with emission in the important 1.55 m telecom wavelength region.…”

First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state

“…These lasers required multiple stacked QD layers for sufficient gain [1,2]. A single-layer InAs QD laser was reported on InP (311)B where the QD density is higher than on InP (100) [3].…”