Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser  Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Kuramoto, Masaru; Sasaoka, Chiaki; Hisanaga, Y.; Kimura, Akitaka; Yamaguchi, Atsushi; Sunakawa, Hajime; Kuroda, Naotaka; Nido, M.; Usui, Akira; Mizuta, Masahiro

doi:10.1143/jjap.38.l184

Cited by 112 publications

(51 citation statements)

References 8 publications

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“…2(a). The output power is calculated using (6) where is the time-averaged value of the photon number. This figure is the first indication of the agreement between experimental results and numerical simulations.…”

Section: Resultsmentioning

confidence: 99%

Self-pulsation in an InGaN laser-theory and experiment

Tronciu

Yamada

Ohno³

et al. 2003

IEEE J. Quantum Electron.

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Abstract-Room-temparature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the laser dynamics was also investigated.Index Terms-Room temperature, saturable absorber, self-pulsation, violet InGaN laser.

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Section: Resultsmentioning

confidence: 99%

Self-pulsation in an InGaN laser-theory and experiment

Tronciu

Yamada

Ohno³

et al. 2003

IEEE J. Quantum Electron.

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“…10 on the basis of measurements reported by Kuramato et al [11] and Götz et al [12] and sometimes using empirical formulae proposed by Maaekowiak and Nakwaski [13]. …”

Section: Model Parametersmentioning

confidence: 99%

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Karbownik

Sarzała

2008

Opto-Electronics Review

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Room-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm2 has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T0 convince very good thermal properties of the above laser.

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“…As a result of recent research, 400 nm (blue-violet) LD performance has been improved and the lifetime has been extended to over 15 000 hours [2]. Blue-violet CW LD's are already commercially available and several reports have recently appeared concerning the CW operation of blue lasers at room temperature [3][4][5][6][7]. In this paper we consider the phenomena of excitability and self pulsation (SP) in blue-violet InGaN lasers.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

2004

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Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report the results of numerical investigations of the dynamical behavior of a blue-violet InGaN laser with a specially incorporated saturable absorber. We have identified the nature of the bifurcation that occurs in the device dynamics and also the conditions that are necessary for self-pulsating and excitable operations. We also demonstrate the influence of the relevant device parameters on the laser dynamics and show how the properties of the saturable absorber and its position in the device have a considerable influence on the laser behavior. Finally theoretical investigations of the excitable behavior and a confirmation of the excitability properties of an InGaN laser are presented and discussed.

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Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Cited by 112 publications

References 8 publications

Self-pulsation in an InGaN laser-theory and experiment

Self-pulsation in an InGaN laser-theory and experiment

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

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