2003
DOI: 10.1109/jqe.2003.819541
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Self-pulsation in an InGaN laser-theory and experiment

Abstract: Abstract-Room-temparature operation of self-pulsating InGaN lasers was obtained at a wavelength of 395 nm. The laser structure consists of a multiquantum-well InGaN active layer and a p-type InGaN single-quantum-well saturable absorber. The frequency range of the self-pulsation was from 1.6 to 2.9 GHz. The experimental results were well explained with our theoretical analysis. We found that features of the saturable absorber strongly affect the self-pulsation. Influence of device and material parameters on the… Show more

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Cited by 15 publications
(11 citation statements)
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References 21 publications
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“…Various effects may affect the system: the re-absorption at the signal wavelength [19,16], the modal structure of the signal [23,24], non-uniform distribution of pump and signal, the thermal lensing and the spatial hole burning [34,35]. A laser, which follows the scenario for the oscillator Toda, is still left to be achieved.…”
Section: Comparison With Experimentsmentioning
confidence: 99%
“…Various effects may affect the system: the re-absorption at the signal wavelength [19,16], the modal structure of the signal [23,24], non-uniform distribution of pump and signal, the thermal lensing and the spatial hole burning [34,35]. A laser, which follows the scenario for the oscillator Toda, is still left to be achieved.…”
Section: Comparison With Experimentsmentioning
confidence: 99%
“…Thus, DBR lasers consist always of at least two sections -an active section and a passive section. If the active layer in a DBR laser extends over the whole cavity, the DBR section can act like a saturable absorber which is known to cause a dynamic unstable behaviour [2][3][4].…”
Section: Introductionmentioning
confidence: 99%
“…Inset: calculated lasing wavelength versus current. The current has been multiplied by a factor of 1.4 to account for lateral current spreading and carrier diffusion Gain g (left) and linewidth enhancement factor α H (9) (right) versus carrier density N at T = 300 K. Black solid: models(3) and(4). Red dotted: microscopic simulation at a fixed wavelength near the gain peak.…”
mentioning
confidence: 99%
“…Earlier studies concentrated on self-pulsation for applications in optical storage systems since this approach can reduce the optical feedback noise [1--14]. Several pulse generation techniques exist, including gain-switching [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17], self-pulsating [18][19][20], mode-locking [7,17,21], and superradiance [22]. Kono et al demonstrated the first gain-switching (GS) operation of a GaN-based LD, producing a peak power of 12 W and 10 W with a pulse duration of 10 ps at 405 nm [15,17].…”
Section: Introductionmentioning
confidence: 99%