Analysis of the dynamics of a blue-violetInxGa1−xNlaser with a saturable absorber

Abstract

Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report the results of numerical investigations of the dynamical behavior of a blue-violet InGaN laser with a specially incorporated saturable absorber. We have identified the nature of the bifurcation that occurs in the device dynamics and also the conditions that are necessary for self-pulsating and excitable operations. We also demonstrate the influence of the relevant device parameters on the laser dynamics and show how the properties of the saturable absorber and its position in the device have a considerable influence on the laser behavior. Finally theoretical investigations of the excitable behavior and a confirmation of the excitability properties of an InGaN laser are presented and discussed.

Numerical Investigation into Optoelectronic Performance of InGaN Blue Laser in Polar, Non-Polar and Semipolar Crystal Orientation

“…The numerical simulation of a reference single QW (SQW) laser structure (Figure 3) is considered to study the non-c-axis-oriented InGaN blue laser optoelectronic performance [17]. This laser structure has been developed by Sharp Corporation at Devices Technology Research Laboratories located in Nara, Japan.…”

“…The structure is also composed of n and p-type InGaN buffer layer in order to maintain low spontaneous emission, n and p-type Al 0.1 Ga 0.9 N top/bottom cladding layer to confine carrier spillover, n and p-type GaN top/bottom optical guiding layer and a p-type Al 0.3 Ga 0.7 N evaporation-prevention layer. An oxide aperture is deposited above the upper AlGaN layer for current and index confinement [17]. In the proposed laser system, the active region material has (hkil) orientation, and all other layers are in (0001) orientation.…”

Gallium Nitride-based Semiconductor Optical Amplifiers

“…Earlier studies concentrated on self-pulsation for applications in optical storage systems since this approach can reduce the optical feedback noise [1--14]. Several pulse generation techniques exist, including gain-switching [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17], self-pulsating [18][19][20], mode-locking [7,17,21], and superradiance [22]. Kono et al demonstrated the first gain-switching (GS) operation of a GaN-based LD, producing a peak power of 12 W and 10 W with a pulse duration of 10 ps at 405 nm [15,17].…”

Modeling of Self-Sustained Pulsation Based on Two-Section Distributed Feedback Lasers with Shift-Layer

“…3,4) Other laser architectures with saturable absorber for SSP have also been proposed. 5,6) An additional advantage to realizing optical clock sources with semiconductor lasers is that its pulsation frequency can be tuned electrically. Some theoretical models have been proposed to describe the SSP mechanisms.…”