Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN

Hamaguchi, Tatsushi; Hoshina, Yukio; Hayashi, Kentaro; Tanaka, Masayuki; Ito, Masamichi; Ohara, Maho; Jyoukawa, Tatsurou; Kobayashi, Noriko; Watanabe, H.; Yokozeki, Mikihiro; Koda, Rintaro; Yanashima, Katsunori

doi:10.35848/1882-0786/ab7bc8

Cited by 34 publications

(21 citation statements)

References 31 publications

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“…For example, the ROC of the lens illustrated in Fig. 1(c) is 795 μm, which is much larger than the ROC < 100 μm reported previously [15]- [18]. Fig.…”

Section: Resultsmentioning

confidence: 51%

“…Previous reports from the present authors, show that a concave mirror structure with curvature on one side of the cavity can eliminate the diffraction loss, allowing a long resonator length, for example, 20 μm or more [15]- [18]. This corresponds to a longitudinal mode interval of ∼1 nm; thus, the longitudinal mode can be positioned near the peak of the gain spectrum without precise control in the cavity length.…”

Section: Introductionmentioning

confidence: 62%

“…With this structure, room-temperature continuous wave (RTCW) lasing at a wavelength of 445 nm and a threshold current of 0.25 mA was obtained [17]. In 2020, RTCW lasing at a wavelength of 515 nm with a threshold current of 1.8 mA was reported for a device with this structure formed on {20-21} semipolar GaN [18].…”

Section: Introductionmentioning

confidence: 94%

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Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror

et al. 2022

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We report a narrow divergence angle in a blue gallium-nitride-based visible vertical-cavity surface-emitting laser (GaN-VCSEL) with a curved mirror. This device exhibited continuous-wave operation at a wavelength of 447.9 nm. The fullwidth at half-maximum divergence angle of the 8 µm-aperture VCSEL was 3.9°when the device was operated at a current of 1.2 × Ith, where Ith is the threshold current. In this type of cavity, the radius of curvature (ROC) of the curved mirror determines the near-field pattern (NPF) and far-field pattern (FFP). The authors fabricated devices having ROC up to 988 µm, which is more than 10 times greater than the ROC of the mirror used in the previously reported structures, allowing this narrow emission. The I-L characteristics showed that the Ith value increased with increasing ROC. The present study investigates the mechanism behind this tendency in detail.

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“…For example, the ROC of the lens illustrated in Fig. 1(c) is 795 μm, which is much larger than the ROC < 100 μm reported previously [15]- [18]. Fig.…”

Section: Resultsmentioning

confidence: 51%

Section: Introductionmentioning

confidence: 62%

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Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror

et al. 2022

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“…However, unlike their NIR counterparts, visible-light VCSELs are still immature for the aforementioned fabrication challenges. Recently, some of these challenges have been addressed by using novel DBR designs based on curved mirrors or nano-porous n-type GaN to create blue-and green-light VCSELs [36][37][38]. Moreover, a quantum-dot-based VCSEL design that can be used to produce laser light in the blue-green range has also been previously demonstrated [39].…”

Section: Displays Augmented and Virtual Realitymentioning

confidence: 99%

Visible‐Light Laser Diodes and Superluminescent Diodes: Characteristics and Applications

Alkhazragi

Holguín‐Lerma

et al. 2021

Digital Encyclopedia of Applied Physics

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Semiconductor light sources technology has seen tremendous strides in recent decades and a rapidly increasing interest in it. The unique advantages and characteristics of this form of light generation include compactness, high efficiency, and reliability. With these recent advancements, light-emitting diodes (LEDs), laser diodes, and superluminescent diodes (SLDs) have become an indispensable part of our homes, factories, and research facilities. In particular, the sensitivity of the human eye to the visible range of the electromagnetic spectrum ranging from 400 to 700 nm and the wavelength-dependence of optical characteristics of materials make visible light required for a plethora of applications ranging from displays for entertainment, to imaging in the medical field, to light-based atomic clocks. While LEDs are the most commonly found type of semiconductor light sources, laser diodes and SLDs are of special interest due to their higher output optical power, spectral purity, and coherence. In this tutorial, we first go over the main unique characteristics of the different types and configurations of visible-light laser diodes and SLDs and their general structures with a focus on their advantages compared to LEDs. We then discuss the applications in which these characteristics are of great interest in the fields of displays, communication, instrumentation, and photonic integrated circuits.

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“…Due to the advantages of low threshold current, single longitudinal mode output, easy process for packaging, wafer level testing, and circular output beams [1] , vertical cavity surface emitting lasers (VCSELs) have shown tremendous application potential in data communication, retinal scanning displays, medical laser, high density optical storage, printing and optical scanners, etc. [2][3][4] . Since the first, to the best of our knowledge, room-temperature electrically injected GaN-based VCSEL was achieved in 2008 [5] , great efforts have been made to achieve better lasing performance for GaN-based VCSELs [6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

et al. 2022

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The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers (VCSELs) to enhance the laser power. In this work, we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection. The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes, which can improve the thermionic emission process for holes to travel across the p-type electron blocking layer (p-EBL). Besides, the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer. Therefore, the better stimulated radiative recombination rate and the increased laser power are obtained, thus enhancing the 3 dB frequency bandwidth. Moreover, we also investigate the impact of the p-AlGaN/p-GaN structure with various AlN compositions in the p-AlGaN layer on the hole injection capability, the laser power, and the 3 dB frequency bandwidth.

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Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN

Cited by 34 publications

References 31 publications

Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror

Narrow Emission of Blue GaN-Based Vertical-Cavity Surface-Emitting Lasers With a Curved Mirror

Visible‐Light Laser Diodes and Superluminescent Diodes: Characteristics and Applications

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

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