Role of wet chemical saw damage removal process in texturing of c-Si and performance of a-Si:H/c-Si heterojunction solar cells

Bhattacharya, Shrestha; Pandey, Ashutosh; Panigrahi, Jagannath; Mandal, Sourav; Komarala, Vamsi K.

doi:10.1007/s00339-023-06400-y

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…The p-a-Si:H and nickel oxide (NiO x ) based hole-selective contact SHJ cells were fabricated using as-cut (100) oriented n-type float-zone crystalline silicon wafers having a resistivity of 2-3 Ω cm, ∼250 µm thickness, and ∼2 ms bulk lifetime. The wafers' saw damage was removed using ∼30 wt.% of NaOH solution at ∼85 • C for 10 min [31]. The wafers were cleaned by adopting the standard Radio Corporation of America (RCA) cleaning procedure.…”

Section: Methodsmentioning

confidence: 99%

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Nayak,

Pandey,

Mandal

et al. 2024

Semicond. Sci. Technol.

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The origin of the low-frequency inductive loop in the Nyquist plot of the Ag/ITO/p-a-Si:H/i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al heterojunction (SHJ) solar cells and their effect on the device performance are investigated by adopting impedance spectroscopy under dark and light. The negative capacitance/low-frequency inductive loop originates from the depopulation of injected charge carriers at the front junction's transport barrier. The p-a-Si:H hole-selective SHJ device with a low-frequency inductive loop also has shown an S-shape and associated performance degradation in the light current density-voltage characteristics due to the opposing field type transport barrier present at the p-a-Si:H/ITO interface, which was overcome after vacuum annealing at 200 ºC. However, NiOx-based hole-selective contact Ag/ITO/NiOx/i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al SHJ solar cells have not shown any low-frequency inductive loop or corresponding S-shape and associated performance degradation due to the optimised contact (minimum resistance) between the NiOx and indium tin oxide (ITO) layers.

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Section: Methodsmentioning

confidence: 99%

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Nayak,

Pandey,

Mandal

et al. 2024

Semicond. Sci. Technol.

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“…The crystallinity (Xc) was extracted by deconvoluting the microcrystalline Raman peaks at ∼520 cm −1 To study the growth of nanocrystalline films, the substrate is also quite crucial for the nucleation phase, controlling the film crystallinity and the growth axis. Prior to PECVD deposition, the as-cut n-type c-Si wafers were first cleaned in piranha solution (H 2 SO 4 : H 2 O 2 in 3:1 ratio) to remove the organic contaminants from the surface followed by saw damage removal in 30 wt% NaOH solution for 10 min [15]. The wafers were then textured in 2 wt% KOH solution with Mono-TEX as an additive for 20 min to obtain an average pyramid size of ∼2 μm.…”

Section: Deposition Of Phosphorous Doped Nc-si:h Thin Film and Its Ch...mentioning

confidence: 99%

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Bhattacharya,

Pandey,

Alam

et al. 2024

Nanotechnology

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We have investigated the PECVD growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the Pd of 122 mW/cm2 and ~2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S/cm, and activation energy of ~23 meV from the ~30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ~2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ~71 % to ~75 %, mainly due to a reduction in electron-selective contact resistivity from ~271 mΩ-cm2 to ~61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ~19.90% and pseudo-efficiency of ~21.90% have been realized from the SHJ cells.

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Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

Pandey¹,

Bhattacharya²,

Panigrahi³

et al. 2023

Appl. Phys. A

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Role of wet chemical saw damage removal process in texturing of c-Si and performance of a-Si:H/c-Si heterojunction solar cells

Cited by 4 publications

References 32 publications

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

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