Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

Pandey, Ashutosh; Bhattacharya, Shrestha; Panigrahi, Jagannath; Mandal, Sourav; Komarala, Vamsi K.

doi:10.1007/s00339-023-06854-0

Cited by 1 publication

(1 citation statement)

References 33 publications

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“…The cells' photovoltaic parameters are presented in table 1. More details related to p-a-Si:H-and NiOx-based SHJ cells can be found in [4,32]. As-fabricated p-a-Si:H cell has shown an S-shape (lower fill factor and V oc ), whereas NiO x cell has not shown any S-shape (higher fill factor and V oc ) in the light J-V characteristics.…”

Section: As-fabricated P-a-si:h and Niox Hole-selective Layers-based ...mentioning

confidence: 99%

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Nayak,

Pandey,

Mandal

et al. 2024

Semicond. Sci. Technol.

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The origin of the low-frequency inductive loop in the Nyquist plot of the Ag/ITO/p-a-Si:H/i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al heterojunction (SHJ) solar cells and their effect on the device performance are investigated by adopting impedance spectroscopy under dark and light. The negative capacitance/low-frequency inductive loop originates from the depopulation of injected charge carriers at the front junction's transport barrier. The p-a-Si:H hole-selective SHJ device with a low-frequency inductive loop also has shown an S-shape and associated performance degradation in the light current density-voltage characteristics due to the opposing field type transport barrier present at the p-a-Si:H/ITO interface, which was overcome after vacuum annealing at 200 ºC. However, NiOx-based hole-selective contact Ag/ITO/NiOx/i-a-Si:H/c-Si/i-a-Si:H/n-a-Si:H/ITO/Al SHJ solar cells have not shown any low-frequency inductive loop or corresponding S-shape and associated performance degradation due to the optimised contact (minimum resistance) between the NiOx and indium tin oxide (ITO) layers.

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Section: As-fabricated P-a-si:h and Niox Hole-selective Layers-based ...mentioning

confidence: 99%

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Nayak,

Pandey,

Mandal

et al. 2024

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

Cited by 1 publication

References 33 publications

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

Observation of negative capacitance in silicon heterojunction solar cells: role of front contact in carrier depopulation

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