Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si

Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistivity Cz n‐Si with P doping levels >5 × 1014 cm−3 containing in addition [Sn] ≈1017–1019 cm−3 has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn‐free n‐Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low‐resistivity Cz n‐Si:Sn.

show abstract

“…The free‐electron concentration ( n ) was determined using Hall effect (the details are described in another study Ref. [35]).…”

Section: Methodsmentioning

confidence: 99%

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kras'ko

Kolosiuk

Voitovych

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

Kras'ko,

Kolosiuk,

Povarchuk

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in τ are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V2O) and vacancy‐oxygen (VO) complexes is the main mechanism of τ degradation in this experiment.

show abstract

Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited

et al. 2022

View full text Add to dashboard Cite

The advent of the point-contact transistor is one of the most significant technological achievements in human history with a profound impact on human civilization during the past 75 years. Although the first transistor was made of germanium it was soon replaced by silicon, a material with lower intrinsic carrier mobilities but with a substantially better native oxide. Interestingly, more than two decades ago, germanium was once again considered as a mainstream microelectronic material, since the introduction of high-k dielectrics allowed the consideration of channel materials irrespective of the quality of their native oxide. After about 50 years of limited studies on the defect processes in germanium, the community once again focused on its applicability for mainstream electronic applications. Nevertheless, there are some bottlenecks that need to be overcome, and it was the aim of the present review to discuss the progress in the understanding of the defect processes of Ge.

show abstract

Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si

Cited by 3 publications

References 32 publications

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited

Contact Info

Product

Resources

About

Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si

Cited by 3 publications

References 32 publications

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited

Contact Info

Product

Resources

About

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness