Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

Abstract

Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in τ are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V2O) and vacancy‐oxygen (VO) complexes is the main mechanism of τ degradation in this experiment.