Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Ambacher, O.; Dimitrov, R.; Stutzmann, M.; Foutz, B. E.; Murphy, Michael J.; Smart, J.; Shealy, J. R.; Weimann, Nils; Chu, K.; Chumbes, M.; Green, B.; Sierakowski, A.J.; Schaff, William J.; Eastman, L.F.

doi:10.1002/(sici)1521-3951(199911)216:1<381::aid-pssb381>3.0.co;2-o

Cited by 128 publications

(59 citation statements)

References 15 publications

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“…2 In addition, the lattice mismatch between GaN and InGaN will induce the piezoelectric field in the InGaN layer and lead to quantum-confined Stark effect (QCSE). 3 The QCSE separates electron and hole wavefunctions which reduces the radiative recombination efficiency, and TDs can act as a carrier leakage path to influence the device reliability as well. 4,5 Besides, TDs are the nonradiative recombination centers which trap carriers and reduce the internal quantum efficiency (IQE).…”

Section: Introductionmentioning

confidence: 99%

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Hsu

et al. 2016

AIP Advances

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In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.

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Section: Introductionmentioning

confidence: 99%

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Hsu

et al. 2016

AIP Advances

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“…1 and 2) owing to the large difference in spontaneous polarization at the interface. 3 High-performance InAlN/GaN high-electron-mobility transistors (HEMTs) have been fabricated and reported. 2,4 To suppress the gate leakage current through the InAlN gate barrier in the application of InAlN/GaN heterostructures to HEMTs, the use of Al 2 O 3 to form a metal-insulator-semiconductor (MIS)-gate HEMT has been reported.…”

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confidence: 99%

Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

Akazawa

Nakano

2012

Applied Physics Letters

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An ab-initio study of electronic and optical properties of corundum Al2O3 doped with Sc, Y, Zr, and Nb J. Appl. Phys. 112, 093709 (2012) Evidence of Eu2+ 4f electrons in the valence band spectra of EuTiO3 and EuZrO3 J. Appl. Phys. 112, 083719 (2012) Model GW study of the late transition metal monoxides J. Chem. Phys. 137, 154110 (2012) First-principles study of electronic structure and magnetic properties of Cu-doped CeO2 J. Appl. Phys. 112, 083702 (2012) Electronic structure and optical band gap of CoFe2O4 thin films

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“…The average electric field was calculated by taking into account spontaneous and piezoelectric polarization [22,25,26], built-in electric field due to the Schottky contact and applied field between the contacts. If a MQW structure is incorporated in the intrinsic region of Schottky diode, it leads to the following expression [27] …”

Section: Models and Discussionmentioning

confidence: 99%

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

Teke

Doğan

Yun

et al. 2003

Solid-State Electronics

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We report on characterization and operation principle of a set of GaN/AlGaN multiple-quantum-well (MQW) photovoltaic detectors. The structures were grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates and fabricated in the back-illuminated vertical Schottky geometry. Introduction of MQWs into the active region of devices is expected to enhance the quantum efficiency due to the high absorption coefficient. A nearly flat spectral responsivity between 325 and 350 nm with 0.054 A/W peak responsivity was achieved from the single-side polished backside (rough) illuminated GaN/AlGaN MQW devices. The cutoff wavelength of the MQW photodetector can be tuned by adjusting the well width, well composition and barrier height. A model has been developed to gain insight into the operation principles of MQWs photodiodes. The peak responsivity increased with decreasing barrier thickness due to enhanced tunneling of photogenerated carriers.

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Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Cited by 128 publications

References 15 publications

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

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