Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe
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Zhou, Lin; Xu, Kai; Zubair, Ahmad; Zhang, Xu; Ouyang, Fangping; Palacios, Tomás; Dresselhaus, M. S.; Li, Yongfeng; Kong, Jing

doi:10.1002/adfm.201603491

Cited by 66 publications

(76 citation statements)

References 34 publications

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“…The optical and electrical properties of 2H MoTe 2 films prepared using a mechanical exfoliated method have been widely investigated . Most recently, owing to the growing interest in large‐scale synthesis of MoTe 2 , several groups have reported the preparation of 1T′ and 1T phase films via phase‐engineered techniques using laser patterning, strain on 2H phase films, and chemical vapor deposition (CVD) . Tunable growth conditions, such as temperature and carrier gas flow rate, make CVD a suitable technique for phase engineering of MoTe 2 films .…”

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confidence: 99%

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Kim

Park

Joung

et al. 2018

Adv Materials Inter

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Phase transition and coexistence of 2H (trigonal prismatic structure) and 1T′ (distorted octahedral structure) phases occur easily in molybdenum ditelluride (MoTe 2 ) when compared with other 2D MX 2 type (M = Mo, W and X = S, Se) transition metal dichalcogenides (TMDs) because of small discrepancies in the cohesive energy. [1][2][3][4] Phase-engineered 2D TMDs, particularly MoTe 2 films including 2H, 1T′, and 1T phases, are very attractive candidates for numerous electronic applications, such as ambipolar field-effect transistors (FETs), environmental sensors, superconductors, spintronics, and valley optoelectronics. [5][6][7][8] Atomically thin-layer 2H MoTe 2 possesses a narrow bandgap energy of 1 eV in comparison to the bandgap energy (1.89 eV) of monolayer MoS 2 and is a potential candidate for various optoelectronic device applications, such as solar cells and photodetectors. [3,8,9] From the electronic device application point of view, the 2H and the 1T phases, i.e., semiconducting and semimetal MoTe 2 are applicable as a 2D materials beyond molybdenum disulfide such as molybdenum ditelluride (MoTe 2 ) have attracted increasing attention because of their distinctive properties, such as phase-engineered, relatively narrow direct bandgap of 1.0-1.1 eV and superior carrier transport. However, a wafer-scale synthesis process is required for achieving practical applications in next-generation electronic devices using MoTe 2 thin films. Herein, the direct growth of atomically thin 1T′, 1T′-2H mixed, and 2H phases MoTe 2 films on a 4 in. SiO 2 /Si wafer with high spatial uniformity (≈96%) via metal-organic vapor phase deposition is reported. Furthermore, the wafer-scale phase engineering of few-layer MoTe 2 film is investigated by controlling the H 2 molar flow rate. While the use of a low H 2 molar flow rate results in 1T′ and 1T′-2H mixed phase MoTe 2 films, 2H phase MoTe 2 films are obtained at a high H 2 molar flow rate. Field-effect transistors fabricated with the prepared 2H and 1T′ phases MoTe 2 channels reveal p-type semiconductor and semimetal properties, respectively. This

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confidence: 99%

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Kim

Park

Joung

et al. 2018

Adv Materials Inter

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“…The inset in the lower-right corner displays a fit to the resistivity data in between 5 and 35 K to a combination of electron-phonon scattering and Fermi-liquid mechanisms. The form of the fitted equation is ρ xx = ρ 0 + cT 2 + gT 5 where ρ 0 is the residual resistivity due to impurity scattering; c and g are fitting parameters to Fermi-liquid (~T 2 ) and electron-phonon scattering (~T 5 ) mechanisms at low temperatures [13,23]. From the best fit, we found ρ 0 = 210 µΩ cm and other fitting parameters are c = 711 × 10 -4 µΩ cm K -2 , and g = 212 × 10 -10 µΩ cm K -5 .…”

Section: B Results and Discussionmentioning

confidence: 99%

Transport characteristics of type II Weyl semimetal MoTe₂ thin films grown by chemical vapor deposition

et al. 2019

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Theoretical calculations and experimental observations show MoTe 2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe 2 thin films on Si/SiO 2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current-voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 K to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.

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“…For example, by inverting the substrate coated with MoO x over the tellurium powder and molecular sieves, Kong and co‐workers synthesized the MoTe 2 thin film successfully as shown in Figure c,d . They found that molecular sieves could adsorb the by‐products (Si 2 Te 3 ) to promote the formation of target products . Moreover, the phases of MoTe 2 film were tunable under different tellurization velocity and the cooling down temperature …”

Section: Preparationmentioning

confidence: 97%

“…Besides, CVD is also a conventional strategy for thin‐film synthesis . For example, by inverting the substrate coated with MoO x over the tellurium powder and molecular sieves, Kong and co‐workers synthesized the MoTe 2 thin film successfully as shown in Figure c,d . They found that molecular sieves could adsorb the by‐products (Si 2 Te 3 ) to promote the formation of target products .…”

Section: Preparationmentioning

confidence: 99%

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Van der Waals 2D Transition Metal Tellurides

Liu

Wang

et al. 2019

Adv Materials Inter

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As important members of transition metal chalcogenides (TMCs), transition metal tellurides (TMTs) have drawn much attention for their various crystal structures with various physical properties. These various structures and structural transitions between them not only are fascinating in the fundamental studies, but also provide unprecedented opportunities in novel device design and applications. In this review, the recent developments in the area of TMTs are outlined. First, the unique crystal and electronic structures of TMTs are introduced. Then the TMTs preparation strategies, including novel exfoliation technique and chemical vapor deposition (CVD), are reviewed. Moreover, the distinctive physical properties of TMTs such as phase transition, intrinsic ferromagnetism, and superconductivity are summarized. Additionally, an overview of device applications in the electronics and optoelectronics field is provided. The prospect for the research of TMTs is presented at the end.

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Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe ₂

Cited by 66 publications

References 34 publications

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Transport characteristics of type II Weyl semimetal MoTe₂ thin films grown by chemical vapor deposition

Van der Waals 2D Transition Metal Tellurides

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Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe 2

Cited by 66 publications

References 34 publications

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition

Van der Waals 2D Transition Metal Tellurides

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Product

Resources

About

Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe ₂

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe₂ Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Transport characteristics of type II Weyl semimetal MoTe₂ thin films grown by chemical vapor deposition