One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.

A highly selective and robust catalyst based on Pt nanoclusters (NCs) confined inside the cavities of an amino-functionalized Zr-terephthalate metal-organic framework (MOF), UiO-66-NH 2 was developed. The Pt NCs are monodisperse and confined in the cavities of UiO-66-NH 2 even at 10.7 wt % Pt loading. This confinement was further confirmed by comparing the catalytic performance of Pt NCs confined inside and supported on the external surface of the MOF in the hydrogenation of ethylene, 1-hexene, and 1,3-cyclooctadiene. The benefit of confining Pt NCs inside UiO-66-NH 2 was also demonstrated by evaluating their performance in the chemoselective hydrogenation of cinnamaldehyde. We found that both high selectivity to cinnamyl alcohol and high conversion of cinnamaldehyde can be achieved using the MOFconfined Pt nanocluster catalyst, while we could not achieve high cinnamyl alcohol selectivity on Pt NCs supported on the external surface of the MOF. The catalyst can be recycled ten times without any loss in its activity and selectivity. To confirm the stability of the recycled catalysts, we conducted kinetic studies for the first 20 h of reaction during four recycle runs on the catalyst. Both the conversion and selectivity are almost overlapping for the four runs, which indicates the catalyst is very stable under the employed reaction conditions.

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