Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO&lt;sub&gt;2&lt;/sub&gt;-Based p-n Junctions

Hazra, Arnab; Bhattacharyya, P.

doi:10.1109/ted.2015.2423371

Cited by 16 publications

(8 citation statements)

References 17 publications

(37 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Their complete understanding is therefore of vital importance for the development of MO based semiconductor devices [13], [14]. Moreover, it has been reported that Schottky type contact is essential on TiO 2 to enable resistive switching [15], making the study of the interface effects of particular interest also for memristor based application.…”

Section: Introductionmentioning

confidence: 99%

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Michalas

Trapatseli

Stathopoulos

et al. 2018

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

Emerging memory technologies have sparked great interest in studying a variety of materials that can be employed in metal-insulator-metal topologies to support resistive switching. While the majority of reports focus on identifying appropriate materials that can be used as active core layers, the selection of electrodes also impacts the performance of such memory devices. Here, both the top and the bottom interfaces of symmetric Metal-Al:TiO x -Metal structures have been investigated by the analysis of their current versus voltage characteristics in the temperature range of 300-350 K. Three different metals were utilized as electrodes, Nb, Au, and Pt, for covering a wide range of work function and electronegativity values. Despite their symmetric structure, the devices were found to exhibit asymmetric performance with respect to the applied bias polarity. Clear signature plots indicating thermionic emission over the interface Schottky barriers have been obtained. The asymmetry between the top and the bottom interfaces was further evaluated by the values of the potential barrier heights and by the barrier lowering factors, both calculated from the experimental data. This study highlights the importance of the interface effects and proves that in addition to film doping, proper (top/bottom) metal selection, and interface engineering should also be exploited for developing thin film metal oxide based devices with tailored electrical characteristics.

show abstract

Section: Introductionmentioning

confidence: 99%

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Michalas

Trapatseli

Stathopoulos

et al. 2018

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

show abstract

“…Reports on TiO 2 -based homojunction diode are few. , Taking advantage of the p-type conductivity in ALD grown TiO 2 and N-TiO 2 thin films, we have fabricated a TiO 2 -based homojunction diode on SiO 2 /Si substrate. The diode I – V characteristics were examined for two p–n homojunctions made with p-TiO 2 /n-TiO 2 and p-N-TiO 2 /n-TiO 2 devices.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO₂

Vasu

Sreedhara

Ghatak

2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2.

show abstract

“…Finally, an opaque solution was obtained after this process of maturing of the solution. The process to synthesize the TiO 2 nanoparticles have been previously discussed in our earlier report [39,40].…”

Section: Methodsmentioning

confidence: 99%

C₆₀-encapsulated TiO₂ nanoparticles for selective and ultrahigh sensitive detection of formaldehyde

Gakhar¹,

Hazra²

2021

Nanotechnology

Self Cite

View full text Add to dashboard Cite

The current study concerns development of fullerene-C 60 -encapsulated TiO 2 nanoparticles hybrid for an efficient detection of volatile organic compounds (VOCs). The nanocomposite was synthesized via chemical route by using hydrated fullerene-C 60 and sol-gel derived undoped ptype TiO 2 nanoparticles. The nanocomposite was characterized morphologically and structurally comparing with pure C 60 clusters and pure TiO 2 nanoparticles as the reference materials. The average diameter of the C 60 -encapsulated TiO 2 nanoparticles was 150 nm whereas the average diameters of C 60 clusters and pure TiO 2 nanoparticles were 161 nm and 18 nm respectively. Therefore, all the materials were implemented in interdigitated electrode based planner structured sensors and tested towards multiple VOCs. However, C 60 -TiO 2 composite exhibited its natural selectivity towards formaldehyde with a very high sensitivity for the concentration range of 1-1000 ppm. C 60 -encapsulated TiO 2 nanoparticles depicted more than double response magnitude (117%) than the pure TiO 2 nanoparticle (48%) and pure C 60 particles (40%) and appreciably fast response/recovery (12 s/331 s) towards 100 ppm of formaldehyde at 150 °C. However, the efficient VOC sensing was achieved in C 60 -encapsulated TiO 2 sensors possibly due to the extreme reactive surface provided by the oxygen functionalized C 60 and easy electronic exchange between ambient and the TiO 2 nanoparticles through C 60 layers. The combined properties of both C 60 and TiO 2 lead to the formation of a promising nanocomposite which provided better sensing characteristics than that of the pure materials.

show abstract

Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO<sub>2</sub>-Based p-n Junctions

Cited by 16 publications

References 17 publications

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO₂

C₆₀-encapsulated TiO₂ nanoparticles for selective and ultrahigh sensitive detection of formaldehyde

Contact Info

Product

Resources

About

Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO<sub>2</sub>-Based p-n Junctions

Cited by 16 publications

References 17 publications

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2

C60-encapsulated TiO2 nanoparticles for selective and ultrahigh sensitive detection of formaldehyde

Contact Info

Product

Resources

About

Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO₂

C₆₀-encapsulated TiO₂ nanoparticles for selective and ultrahigh sensitive detection of formaldehyde