Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

Olziersky, Antonis; Barquinha, Pedro; Vilà, A.; Magaña, Carlos; Fortunato, Elvira; Morante, J.R.; Martins, Rodrigo

doi:10.1016/j.matchemphys.2011.10.013

Cited by 144 publications

(118 citation statements)

References 24 publications

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“…5. According to the study conducted by Olziersky et al 36 , the moderate In/Ga atom ratio of 0.95 should yield a reasonably high carrier mobility. We have therefore assumed that the mobility of IGZO is 10 cm 2 V À 1 s À 1 (roughly the mobility value obtained from TFTs based on similar IGZO material 22,28,30 ).…”

Section: Resultsmentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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Section: Resultsmentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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“…Generally, strong oxygen-binding cations, e.g., X ¼ Y, 18 Ga, 11,19 Ti, 20 and Al, 21 are introduced into In 2 O 3 host as matrix dopants to adjust the carrier concentration. Generally, strong oxygen-binding cations, e.g., X ¼ Y, 18 Ga, 11,19 Ti, 20 and Al, 21 are introduced into In 2 O 3 host as matrix dopants to adjust the carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

Liu

Zhu

et al. 2015

RSC Adv.

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Solution-processed oxide semiconductors have been widely studied with the objective of achieving highperformance, sustainable and low-cost electronic devices. In this report a simple and eco-friendly waterinducement method has been developed to fabricate high-k dielectrics and hybrid thin-film transistors (TFTs); introducing metal nitrates and deionized water as the precursor materials. The AlO x dielectric films annealed at temperatures higher than 350 C result in low leakage current densities and the dielectric constants are nearly 7. Instead of the conventional oxide semiconductors, water-induced (WI) polyvinylprrolidone (PVP) was introduced into the In 2 O 3 solution to form a hybrid metal oxide/polymer channel layer. The 250 C-annealed WI In 2 O 3 : PVP TFTs based on AlO x dielectric exhibit outstanding electrical performances and high stability. These promising properties were obtained at an ultra-low operating voltage of 2 V. The WI metal oxide/polymer hybrid TFTs are promising alternatives for applications in low-cost, low-consumption and eco-friendly flexible electronics.

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“…[15][16][17] Since then, AOS has been widely investigated mainly due to its lower temperature processing than Si in a large scale. [12,[14][15][16][17] AOS have electronic properties superior to a-Si:H, including higher mobility ≈ 10 cm 2 V −1 s −1 , one order of magnitude lower leakage current, and longer reliability life time (forecast). [12,[14][15][16][17] AOS have electronic properties superior to a-Si:H, including higher mobility ≈ 10 cm 2 V −1 s −1 , one order of magnitude lower leakage current, and longer reliability life time (forecast).…”

Section: A Memory Structure With Different Control Gatesmentioning

confidence: 99%

“…[1,9,10] Specially, the updated devices could be scaled down by lithography processes according to the Experimental Section and thus adapted to the present foundry lines. [12,[14][15][16][17] We have found that by adjusting the processing conditions such as oxide proportions, the material could be changed from n-type to p-type. We hold that the materials properties including electrical properties could be adjusted between insulator to semiconductor and even to conductor, from semiconductor to conductor, or vice versa.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

A Memory Structure with Different Control Gates

Dai

Guan

Zhang

2018

Adv Elect Materials

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Memory is a key and fundamental component in integrated circuits (IC). A dominant volatile memory is the dynamic random access memory (DRAM) with one transistor and one capacitor, whose footprint is comparable to about two transistors. Memory structure needs further simplification according to IC's scaling‐down requirement. However, most updated structures at present are still mainly limited in lab. Here, a memory structure with one transistor is demonstrated. The advantages of this new structure over conventional memory structures include the simplification of the structure by saving a capacitor space in DRAM, and thus the simplification of fabrication process. Typical characterization of the memory device is also performed, and very quick response time (≈1 ns), which is faster than most present memories in the foundry, that is, 2 ns or more, is reported. Both simulation and experiments are performed to explain the memory working mechanism. The memory programming functions are implemented through the junction caused by control gate. This structure could be scaled down by using lithography processes in the foundry, which could ensure a fair reliability and enable immediate applications for information technology electronics as a potential alternative candidate for DRAM.

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Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

Cited by 144 publications

References 24 publications

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

A Memory Structure with Different Control Gates

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