Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance

Centurioni, E.; Iencinella, D.

doi:10.1109/led.2003.811405

Cited by 119 publications

(60 citation statements)

References 11 publications

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“…The change in Al work function to −3.3 eV is approximately the same as that reported by Toyoshima et al [9]. The work function of ITO can vary from −4.3 to −5.1 depending on the stoichiometry, organic contamination and oxidation type [15], and we have assumed it to be shifting to about −5.0 eV and this explains our experimental behavior. Further, approximate changes in HOMO-LUMO levels in the active material have been shown in figure 2(c).…”

Section: Resultssupporting

confidence: 87%

An anomalous behavior in degraded bulk heterojunction organic solar cells

Singh¹,

Arora²,

Kumar³

et al. 2011

Phys. Scr.

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An anomalous behavior-a change in polarity with the passage of time in the bulk heterojunction poly(3-hexylthiophene) (P3HT):6,6-phenylC61 butyric acid methyl ester (PCBM) organic solar cells-is reported here. This work is a continuation of our previous work where the initial degradation of the organic solar cells, freshly prepared up to 4 h, was mainly due to domain formation in the active layer. With the passage of time, the activity at the interfaces starts becoming significant. A decrease of V OC and J SC , leading to a change in polarity, has been reported and explained up to 300 h after fabrication.

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Section: Resultssupporting

confidence: 87%

An anomalous behavior in degraded bulk heterojunction organic solar cells

Singh¹,

Arora²,

Kumar³

et al. 2011

Phys. Scr.

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“…Only from a passivation perspective, the presence of a highly doped (n-type) TCO can be beneficial when capping in stacks, but is detrimental for ip stacks. These two opposite observations are coherent with a reduced and augmented, TCO/a-Si:H(n/p) WF mismatch, respectively [39], as result of TCO doping and bare TCO WF variations (for a more detailed discussion on the factors determining energy-band lineup and band bending in the c-Si wafer; see also the Appendix). These phenomena may directly impact the FF upper limits, for the different SHJ device architectures (see Section IV).…”

Section: ) Low-pressure Chemical Vapor Deposition Boron-doped Zinc Omentioning

confidence: 61%

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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Abstract-Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

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“…An open question, and a potential challenge in implementing new TCOs in SHJ cells, is how the alignment of the TCO band structure with that of the doped a-Si:H layers underneath affects carrier transport [113]. As practically all available TCOs are n-type, an Ohmic contact with n-type a-Si:H can be assured.…”

Section: Transparent Conductive Oxide Depositionmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

745

352

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance

Cited by 119 publications

References 11 publications

An anomalous behavior in degraded bulk heterojunction organic solar cells

An anomalous behavior in degraded bulk heterojunction organic solar cells

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

High-efficiency Silicon Heterojunction Solar Cells: A Review

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