Role of Fermi-Level Pinning in Nanotube Schottky Diodes

Léonard, François; Tersoff, J.

doi:10.1103/physrevlett.84.4693

Cited by 351 publications

(216 citation statements)

References 19 publications

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“…One of the most influential theoretical studies on Schottky barriers in CNT-metal contacts has been performed by Léonard et al 57 The authors consider an end-bonded configuration with a cylinder with a diameter of 1.4 nm which is terminated at a planar metal contact. The presence of dipoles due to interface states is taken into account by introducing charges that give rise to a potential that decays within a few nm.…”

Section: A Electrostatic Modelingmentioning

confidence: 99%

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Schottky barriers in carbon nanotube-metal contacts

Svensson

Campbell

2011

Journal of Applied Physics

178

134

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Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability Applied Physics Letters 95, 264103 (2009) Semiconducting carbon nanotubes (CNTs) have several properties that are advantageous for field effect transistors such as high mobility, good electrostatics due to their small diameter allowing for aggressive gate length scaling and capability to withstand high current densities. However, in spite of the exceptional performance of single transistors only a few simple circuits and logic gates using CNTs have been demonstrated so far. One of the major obstacles for large scale integration of CNTs is to reliably fabricate p-type and n-type ohmic contacts. To achieve this, the nature of Schottky barriers that often form between metals and small diameter CNTs has to be fully understood. However, since experimental techniques commonly used to study contacts to bulk materials cannot be exploited and studies often have been performed on only single or a few devices there is a large discrepancy in the Schottky barrier heights reported and also several contradicting conclusions. This paper presents a comprehensive review of both theoretical and experimental results on CNT-metal contacts. The main focus is on comparisons between theoretical predictions and experimental results and identifying what needs to be done to gain further understanding of Schottky barriers in CNT-metal contacts.

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Section: A Electrostatic Modelingmentioning

confidence: 99%

“…[57][58][59][60] In these calculations, the CNT is considered to be an ideal cylinder and the exact atomic configuration is disregarded.…”

Section: Theoretical Modeling Of Cnt-metal Contactsmentioning

confidence: 99%

Schottky barriers in carbon nanotube-metal contacts

Svensson

Campbell

2011

Journal of Applied Physics

178

134

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“…While the top and bottom of the SiNW are covered with thermally grown SiO2 (due to SOI top-layer thinning and BOX below), the side walls of the SiNW are covered with SiO2 formed by the chemical cleaning of the sample in a mixture of sulfuric acid and hydrogen peroxide. As shown in figure 3 (inset), the electrical conductivity drops when the back-gate voltage (Vbg) increases to positive values, which is a typical p-type SiNW FET operating in accumulation mode: holes as majority carriers [20][21][22].…”

mentioning

confidence: 99%

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

et al. 2010

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Abstract:Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 μm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO2 support a model of Fermi level pinning near the conduction band. The I-V curves of the nanowires reveal a current carrier polarity reversal depending on Si-SiO2 and Si-H bonds on the nanowire surfaces.

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“…2,3,4 Among the device physics problems raised, the nature of the electronic transport through a metal-semiconducting carbon nanotube interface stands out 5,6,7,8 as one of the basic device building blocks. 9 Although transport through a metallong carbon nanotube interface has been studied using the bulk band structure and one-dimensional electrostatics, 6,7,8 it is important to investigate device functionality of finite carbon nanotubes with lengths of nanometer range and three-dimensional electrostatics, which will also shed light on the scaling limit of carbon nanotube devices.…”

mentioning

confidence: 99%

“…Since the screening of Coulomb interaction is relatively ineffective within the SWNT due to the reduced dimensionality, 6,7 an atomistic study of the electronic processes throughout the metal-SWNT-metal junction is needed. We use a self-consistent tight-binding theory based on the semi-empirical implementation of the selfconsistent Matrix Green's function (SCMGF) method for first-principles modeling of molecular-scale devices.…”

mentioning

confidence: 99%

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Xue

Ratner

2003

Applied Physics Letters

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Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally-activated transport with increasing nanotube length.

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Role of Fermi-Level Pinning in Nanotube Schottky Diodes

Cited by 351 publications

References 19 publications

Schottky barriers in carbon nanotube-metal contacts

Schottky barriers in carbon nanotube-metal contacts

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

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