GCNBs were prepared by chemical vapor deposition at Tokai Carbon Co. Ltd. The detailed preparation procedure has been reported previously [18]. The structure of GCNBs was studied by X-ray diffraction (XRD) (Rigaku, Rint2500), Raman spectroscopy (JovinYvon, T-64 000), and TEM (Hitachi-9000).For the fabrication of GCNB electrodes, each GCNB sample was mixed with a solution of poly(vinylidene difluoride)/N-methylpyrrolidinone (PVdF/NMP) (KF # 1120, Kureha) to make a slurry of a suitable viscosity. The weight ratio of GCNBs to PVdF was adjusted to 9:1. Then, the slurry was spread onto a copper foil thinly and evenly to fabricate the electrodes. The electrode was allowed to stand in a draft overnight to evaporate most of the NMP solvent, and was then vacuum dried at 80°C for 1 day. The electrode thickness was ca. 100 lm. For electrochemical measurements, 1 mol dm -3 LiClO 4 dissolved in PC and 1 mol dm -3 LiClO 4 dissolved in EC:DEC (1:1 by volume) were used as electrolytes. The former and the latter electrolytes are referred to as PC-and EC-based electrolytes, respectively. CV measurements were performed in a three-electrode cell using a HSV-100 (Hokuto Denko) instrument. Alternating current (AC) impedance measurements were also conducted with a three-electrode cell using a Solartron SI 1255 impedance analyzer coupled with a SI 1480 multi-channel electrochemical interface over a frequency range from 100 kHz to 10 mHz with an AC oscillation of 10 mV. Lithium metal was used as the counter and reference electrodes, and the GCNB electrode served as the working electrode. Unless otherwise stated, potentials were referenced to lithium metal.

Semiconductor nanomembranes are single-crystal sheets with thickness ranging from 5 to 500nm. They are flexible, bondable, and mechanically ultra-compliant. They present a new platform to combine bottom-up and top-down semiconductor processing to fabricate various three-dimensional (3D) nanomechanical architectures, with an unprecedented level of control. The bottom-up part is the self-assembly, via folding, rolling, bending, curling, or other forms of shape change of the nanomembranes, with top-down patterning providing the starting point for these processes. The self-assembly to form 3D structures is driven by elastic strain relaxation. A variety of structures, including tubes, rings, coils, rolled-up "rugs", and periodic wrinkles, has been made by such self-assembly. Their geometry and unique properties suggest many potential applications. In this review, we describe the design of desired nanostructures based on continuum mechanics modelling, definition and fabrication of 2D strained nanomembranes according to the established design, and release of the 2D strained sheet into a 3D or quasi-3D object. We also describe several materials properties of nanomechanical architectures. We discuss potential applications of nanomembrane technology to implement simple and hybrid functionalities.

We demonstrate, by theoretical analysis and molecular dynamics simulation, a mechanism for fabricating nanotubes by self-bending of nanofilms under intrinsic surface-stress imbalance due to surface reconstruction. A freestanding Si nanofilm may spontaneously bend itself into a nanotube without external stress load, and a bilayer SiGe nanofilm may bend into a nanotube with Ge as the inner layer, opposite of the normal bending configuration defined by misfit strain. Such rolled-up nanotubes can accommodate a high level of strain, even beyond the magnitude of lattice mismatch, greatly modifying the tube electronic and optoelectronic properties.

In many neural culture studies, neurite migration on a flat, open surface does not reflect the three-dimensional (3D) microenvironment in vivo. With that in mind, we fabricated arrays of semiconductor tubes using strained silicon (Si) and germanium (Ge) nanomembranes and employed them as a cell culture substrate for primary cortical neurons. Our experiments show that the SiGe substrate and the tube fabrication process are biologically viable for neuron cells. We also observe that neurons are attracted by the tube topography, even in the absence of adhesion factors, and can be guided to pass through the tubes during outgrowth. Coupled with selective seeding of individual neurons close to the tube opening, growth within a tube can be limited to a single axon. Furthermore, the tube feature resembles the natural myelin, both physically and electrically, and it is possible to control the tube diameter to be close to that of an axon, providing a confined 3D contact with the axon membrane and potentially insulating it from the extracellular solution.

Significant new mechanical and electronic phenomena can arise in single-crystal semiconductors when their thickness reaches nanometer dimensions, where the two surfaces of the crystal are physically close enough to each other that what happens at one surface influences what happens at the other. We show experimentally that, in silicon nanomembranes, through-membrane elastic interactions cause the double-sided ordering of epitaxially grown nanostressors that locally and periodically highly strains the membrane, leading to a strain lattice. Because strain influences band structure, we create a periodic band gap modulation, up to 20% of the band gap, effectively an electronic superlattice. Our calculations demonstrate that discrete minibands can form in the potential wells of an electronic superlattice generated by Ge nanostressors on a sufficiently thin Si(001) nanomembrane at the temperature of 77 K. We predict that it is possible to observe discrete minibands in Si nanoribbons at room temperature if nanostressors of a different material are grown.

Mechanical bending is ubiquitous in heteroepitaxial growth of thin films where the strained growing film applies effectively an "external" stress to bend the substrate. Conventionally, when the deposited film is much thinner than the substrate, the bending increases linearly with increasing film thickness following the classical Stoney formula. Here we analyze the bending of ultrathin ͑nanometer range͒ substrates induced by growth of coherently strained thin films. The behavior deviates dramatically from the classical linear dependence: when the film thickness becomes comparable to the substrate thickness the bending decreases with increasing film thickness. This complex bending behavior can be understood by considering evolution of strain sharing between the film and substrate. We demonstrate experimentally such counterintuitive bending of a nanoscale thin Si substrate induced by a coherently strained Ge film, in the form of islands, grown on silicon-on-insulator substrate. Larger dome islands, representing a thicker film, induce much less bending of the substrate than smaller hut islands, representing a thinner film, in direct contrast to their behavior on thick Si. We explain these observations by properly considering the island shape and strain relaxation within the island.

Pseudomorphic three-dimensional Ge nanocrystals (quantum dots) grown on thin silicon-on-insulator substrates can induce significant bending of the silicon template layer that is local on the nanometer scale. We use molecular dynamics simulations and analytical models to confirm the local bending of the Si template and to show that its magnitude approaches the maximum value for a freestanding membrane. The requisite greatly enhanced viscous flow of SiO2 underneath the Si layer is consistent with the dependence of the viscosity of SiO2 on shear stress.

Transparent electrodes (TEs) having electrooptical trade‐offs better than state‐of‐the‐art indium tin oxide (ITO) are continuously sought as they are essential to enable flexible electronic and optoelectronic devices. In this work, a TiO2‐Ag‐ITO (TAI)‐based TE is introduced and its use is demonstrated in an inverted polymer solar cell (I‐PSCs). Thanks to the favorable nucleation and wetting conditions provided by the TiO2, the ultrathin silver film percolates and becomes continuous with high smoothness at very low thicknesses (3–4 nm), much lower than those required when it is directly deposited on a plastic or glass substrate. Compared to conventional ITO‐TE, the proposed TAI‐TE exhibits exceptionally lower electrical sheet resistance (6.2 Ω sq−1), higher optical transmittance, a figure‐of‐merit two times larger, and mechanical flexibility, the latter confirmed by the fact that the resistance increases only 6.6% after 103 tensile bending cycles. The I‐PSCs incorporating the TAI‐TE show record power conversion efficiency (8.34%), maintained at 96% even after 400 bending cycles.