Role of energy in low-temperature high-rate formation of hydrophilic TiO2 thin films using pulsed magnetron sputtering

Oxygen partial pressure and thermal annealing dependent properties of RF magnetron sputtered TiO2−x films

“…This result is in good agreement with the earlier report [20]. The amorphous nature of the films can be explained by the fact that during the sputtered deposition the substrate temperature is far below the temperature of Titania crystallization [21].…”

Microstructure and properties of Cr–Cu–N coatings with ultra-low copper content

“…For the DC coatings containing low Cu content (about 3.5%), the preferred orientation changes from CrN(111) to (200) with increasing bias due to bias effect [13]. The difference of the structure in RF and DC sputtering is a higher ionization for RF condition which results in more effective ion impinging on the coating growth and then affecting the growth orientation [15][16][17][18][19][20]. Therefore, Cu content, bias and RF/DC are all responsible for preferred orientation.…”

Ta–Zr–N Thin Films Fabricated through HIPIMS/RFMS Co-Sputtering

“…The deficiency of N in the Ta0.84Zr0.16N0.40 coating resulted in that an excess Ta remained in the β-Ta phase but no N atoms were available to form TaN. The N content of the Ta-Zr-N thin films decreased with increasing power supplied on the Ta target (WTa), which was attributed to the re-sputtering of N atoms from the surface resulting from the increasing energy of bombarding ions [23,24]. (Table 3).…”

“…Matenoglou et al [21] reported that the ternary transition metal nitrides Ta x Me 1−x N (Me = Ti, Zr, Hf, Nb, Ta, Mo, W) formed solid solutions over the entire x range (0 < x < 1) and that they were stable in the rock-salt structure regardless of the valence electron configuration of its constituent metals. Ta ), which was attributed to the re-sputtering of N atoms from the surface resulting from the increasing energy of bombarding ions [23,24]. Ta2N (ICDD 26-0985), and cubic ZrN phases, which is attributable to the severe lack of N content in the thin films.…”