Oxygen partial pressure and thermal annealing dependent properties of RF magnetron sputtered TiO2−x films

Reddy, Y. Ashok Kumar; Kang, In-Ku; Shin, Young Bong; Lee, Hee Chul; Reddy, P. Sreedhara

doi:10.1016/j.mssp.2014.12.080

Cited by 22 publications

(7 citation statements)

References 37 publications

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“…The substrate heating temperature is generally 300 °C∼550 °C, and the vacuum is about 10 -3 Pa. The vacuum chamber is typically an inert gas, which can be obtained by changing the oxygen partial pressure and substrate temperature to get titanium oxide films with different structures and performances [22].…”

Section: Magnetron Sputteringmentioning

confidence: 99%

“…Ti 2 O 3 is a conductive material, while TiO 2 is an insulator with a high resistivity of about 10 8 Ω•cm. In comparison, TiO 2−x with excess titanium is an N-type semiconductor with unique electrical properties [22]. Recently, it has been reported that non-stoichiometric TiO 2−x films can be used as thermistor materials for the uncooled bolometer [23,24].…”

Section: Introductionmentioning

confidence: 99%

“…They successfully investigated the effect of the oxygen partial pressure and Nb doping on the TiO 2−x film properties. They found that with the oxygen partial pressure increasing, the resistivity was increased, which resulted in the enhancement of TCR value for about 3.6 -%/K [22]. The Nb-doped TiO 2−x films showed a controllable resistivity, low 1/f noise parameter for 10 -12 , and relatively high TCR value for 3.1 -%/K [25].…”

Section: Introductionmentioning

confidence: 99%

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TiO_2−x films for bolometer applications: recent progress and perspectives

Zhang

Yan

Peng

et al. 2022

Mater. Res. Express

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The bolometer is widely used in military and civilian infrared imaging due to its advantages of non-cooling, small size and portability. Thermosensitive materials seriously affect the performance of bolometers. As a kind of heat-sensitive material, the TiO2-x material has the advantages of good thermal stability, large-area preparation, and compatibility with the complementary metal-oxide semiconductor (CMOS) process. However, there is almost no review on the application of titanium oxide for bolometers. In this paper, we introduce the bolometer's main thermal and photoelectric performance parameters and the critical technologies to manufacture the bolometer. Finally, we will particularly emphasize the effects of preparation process parameters of TiO2 on the performance parameters temperature coefficient of resistance (TCR), 1/f noise, etc., were studied.

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Section: Magnetron Sputteringmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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TiO_2−x films for bolometer applications: recent progress and perspectives

Zhang

Yan

Peng

et al. 2022

Mater. Res. Express

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“…31,32 Au nanoparticles on TiO 2 have been found to undergo UV-induced photo-oxidation in aerated conditions by the reaction with photoholes yielding positively charged Au ions, Au + , that could be accommodated within the titania matrix. 33 Titania films can be prepared by different techniques comprising electron-beam evaporation, 33 dc and rf reactive sputtering, 35 pulse laser deposition, 36 chemical vapor, 37 atomic layer deposition, 38 and sol−gel processes. 39 In this work we focus our report on the introduction of versatile UHV-based buffer/ reactive layer assisted growth/deposition (BLAG and RLAD) methods 40,41 for the formation of thin hybrid films comprising a titania matrix and silver nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

Buffer Layer Assisted Growth of Ag Nanoparticles in Titania Thin Films

et al. 2015

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Developing materials with improved photocatalytic activity is important for light energy conversion and storage within chemical bonds. Here we present a new type of hybrid film of silver nanoparticles (AgNPs) embedded within TiO x (x ≤ 2) to approach this goal, introducing visible light absorption via surface-plasmon excitation of the AgNPs. Silver nanoparticles were prepared by an ultrahigh vacuum (UHV) based buffer layer assisted growth method. The titania films as a substrate and protective layers were grown by the reactive layer assisted deposition (RLAD) technique; in both cases amorphous solid water (ASW) was the buffer material. The thin titania films and the AgNPs were ex situ characterized by UV−vis, micro-Raman, XRD, XPS, SEM, and TEM techniques. The titania protective layers on top of the silver particles were found to introduce a dielectric environment for the AgNPs, leading to a significant red-shift of their plasmon resonance from 460 to 530 nm, in addition to avoiding oxidation of the small nanoparticles. Photoinduced activity of these hybrid films has been tested following the degradation of methylene blue (MB) in aqueous solution under both UV and visible pulsed laser irradiation. Preliminary results have shown photocatalytic activity of the RLAD titania film with only marginal influence due to the presence of the AgNPs. Possible reasons for this observation are discussed.

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“…A fase mais opticamente ativa é a anatase (Ivanova, et al, 2014), definindo dessa forma muitas de suas aplicações. As propriedades estruturais, ópticas e elétricas do TiO2 podem ser alteradas com a adição de dopantes (Mazur, et al, 2015), modificações nas condições de deposição e tratamentos térmicos pós deposição (Reddy, et al, 2015) (Bukauskas, et al, 2015) (S. Çörekçía & Özçelíkb, 2012).…”

Section: Filmes Finos De óXido De Titâniounclassified

Produção e caracterização de filmes finos de TiO<sub>2</sub>

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Gostaria de agradecer a todos que fizeram parte direta ou indiretamente para a realização desse trabalho. Ao meu Orientador Chubaci, pela paciência, pelo carinho e por todo o apoio durante essa longa jornada, desde os idos tempos da graduação. Ao Professor Ronaldo Mansano pela participação na produção das amostras no sistema de RF magnetron sputtering. À professora Márcia Fantini e ao Antônio Carlos, por todo a atenção e ajuda. Aos funcionários do LAMFI, pelo apoio técnico em especial ao Cleber, por toda contribuição e aprendizado que me ofereceu. Aos meus amigos de tantos anos de IFUSP Renato, Henrique, Artur, Danilo, Thales e tantos outros que não caberiam aqui, que me acompanharam por toda essa trajetória dando todo apoio, sem vocês nada disso teria sido possível. Às minhas amigas Flávia, Emanuelle, Karolyne, por todo apoio, torcida e anos de amizade. A todos aquelas pessoas que a vida me trouxe, não por acaso, sem vocês eu não teria chegado onde cheguei. Às tantas outras pessoas que não citei, agradecerei pessoalmente. Ao CNPq pelo apoio financeiro.

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Oxygen partial pressure and thermal annealing dependent properties of RF magnetron sputtered TiO2−x films

Cited by 22 publications

References 37 publications

TiO_2−x films for bolometer applications: recent progress and perspectives

TiO_2−x films for bolometer applications: recent progress and perspectives

Buffer Layer Assisted Growth of Ag Nanoparticles in Titania Thin Films

Produção e caracterização de filmes finos de TiO<sub>2</sub>

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Oxygen partial pressure and thermal annealing dependent properties of RF magnetron sputtered TiO2−x films

Cited by 22 publications

References 37 publications

TiO2−x films for bolometer applications: recent progress and perspectives

TiO2−x films for bolometer applications: recent progress and perspectives

Buffer Layer Assisted Growth of Ag Nanoparticles in Titania Thin Films

Produção e caracterização de filmes finos de TiO<sub>2</sub>

Contact Info

Product

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TiO_2−x films for bolometer applications: recent progress and perspectives

TiO_2−x films for bolometer applications: recent progress and perspectives