Role of crystal orientation on chemical mechanical polishing of single crystal copper

Zhu, Aibin; He, Dayong; Luo, Wencheng; Liu, Yangyang

doi:10.1016/j.apsusc.2016.06.030

Cited by 9 publications

(3 citation statements)

References 15 publications

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“…Based on the adaptive mesh algorithms, regions with intensive local deformation would be fully automatic and the substrate is represented by a small group of sampling points. As a result, simulation with sufficient accuracy and high efficiency could be achieved [242].…”

Section: Methodsmentioning

confidence: 99%

Nanomanufacturing—Perspective and applications

et al. 2017

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Section: Methodsmentioning

confidence: 99%

Nanomanufacturing—Perspective and applications

et al. 2017

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“…29 Discs/coupons of bulk metals are more suited for tribological setups, but microstructurally they are not the best models of real device components. 32,33 Thus, within the practical confines of commonly available samplechoices, it is difficult to wholly emulate both the (electro)chemical and the mechanical aspects of fab-based CMP with laboratory compatible models. However, these model systems (especially those combined with tribology) can help to identify, in a cost effective way, the intrinsic, metal-specific roles of slurry-additives, such as their material selectivity, dissolution/passivation characteristics, pH dependent reactions, and their affinities for localized corrosion; all of these features are central to formulating new slurry designs.…”

Section: Limits and Utilities Of Laboratory Scale Model Cmp Systemsmentioning

confidence: 99%

Perspective—Electrochemical Assessment of Slurry Formulations for Chemical Mechanical Planarization of Metals: Trends, Benefits and Challenges

Roy¹

2018

ECS J. Solid State Sci. Technol.

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With continued shrinkage of circuit dimensions, the technique of chemical mechanical planarization (CMP) has become progressively more intricate through the last decade. Since the chemical mechanism of metal CMP is governed by electrochemical effects, the complex task of CMP-slurry engineering can be economically assisted in the electroanalytical approach by using laboratory scale model systems. This article discusses how CMP has been impacted by device scaling, and examines the status of fundamental studies of metal CMP. The techniques suitable for studying model CMP systems are discussed, along with an assessment of the utilities and the practical limits of such experiments. Chemical mechanical planarization (CMP) is an essential processing step of integrated circuit (IC) fabrication. 1,2 CMP of the metal components of logic devices constitute a major aspect of this technique and, like other areas of IC manufacturing, metal CMP has become quite complex while addressing the emerging demands of technology through the last decade. 3 The new challenges of metal CMP originate from both the scaling and the novel material aspects of these systems. 3,4 At the same time, published reports indicate that, many of these issues, especially those related to the slurry consumables, 5 can be addressed to a large extent through electroanalytical examinations of slurry functions using scaled down models of actual CMP systems. 6 Recent studies performed in industrial facilities have also identified a critical need to further advance the fundamental understanding of metal CMP. 7,8 The present article provides a perspective on these fundamental research aspects of metal CMP that are in the core of most laboratory scale studies of these systems. Device Scaling and CMP ConsiderationsThe International Technology Roadmap for Semiconductors (ITRS) specified the earlier technology nodes in terms of the DRAM half-pitch (hp), or the microprocessor's level-1 metal hp of a device. 9 Basically until the 65 nm node, the shrinkage of feature-size has continued in line with Dennard scaling, by a factor (S) of 1/ √ 2, to accommodate doubling of transistors per unit chip area (scaling as S 2 = 1/2) every two years in relation to Moore's law. 10 Increased leakage currents in the subsequent feature reductions have eventually shifted this technology trend, with the emergence of advanced multicore systems. 11 While the scaling factor of 1/ √ 2 has been largely maintained in the post-Dennard period, the newer logic devices have evolved in a more complex manner compared to their earlier counterparts. The middle-of-line (MOL) metallization scheme has emerged from the need to reduce the parasitic effects of active wiring that extends over 4 km cm −2 for >13 metal layers. 9 Novel diffusion barriers and ultra-low-k (ULK) dielectrics, Fin field effect transistors (Fin-FETs), high-k gate dielectrics, and exploratory designs/materials for local interconnects have been steadily incorporated in new device architectures in keeping with the advents of scaling sch...

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“…In existing researches on material removal mechanism of vibration assisted polishing (Yu et al, 2018), the effects of processing parameters such as polishing pressure (Yang et al, 2015;Han et al, 2015), vibration parameters (Song et al, 2016;Xu et al, 2011;Li et al, 2014a;Zhao et al, 2016;Mullany and Mainuddin, 2012;Maroju et al, 2017;Li et al, 2019) and shapes of abrasives (Liang et al, 2016;Zhu et al, 2016) on material removal rate (Guo and Suzuki, 2018;Wang et al, 2018) and surface roughness were usually researched by using theoretical and experimental methods, and polishing mechanism was analysed by means of microscopic characterisation (Belkhir et al, 2014;Cao et al, 2016;Salvatore et al, 2017;Li et al, 2012;Hreha and Hloch, 2013). At present, the mechanism of how the vibration parameters (frequency, amplitude) affect the polishing fluid pressure, distributions and movement characteristics of abrasives and other aspects are not well explained up to now, because these physics phenomena cannot be observed by using modern instruments.…”

Section: Introductionmentioning

confidence: 99%