Role of carbon in the formation of ohmic contact in Ni/4H SiC and Ni/Ti/4H SiC

Siad, M.; Abdesslam, M; Chami, A.C.

doi:10.1016/j.apsusc.2012.03.108

Cited by 27 publications

(10 citation statements)

References 25 publications

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“…3(b) shows the Raman spectra of sample AN650, AN750, AN850, AN950 and AN1050. The Raman peaks of 4H-SiC and Ni 2 Si are marked by rhombus (᭜) and dots (•), respectively, which is consistent with what Siad et al 18 and Cichoň et al 20 have reported. It is obvious that some new Raman peaks appear when the annealing temperature exceeds 950 • C. The new peaks correspond to Ni 2 Si and SiC.…”

Section: Structural Characterization Of Ni/v/4h-sic Structure Annesupporting

confidence: 80%

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

et al. 2014

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A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

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Section: Structural Characterization Of Ni/v/4h-sic Structure Annesupporting

confidence: 80%

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

et al. 2014

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“…The excellent properties of SiC such as high thermal conductivity, high breakdown field and high saturated drift velocity have drawn the interest of many researchers [6]. These characteristics make SiC a very good semiconductor capable of outperforming silicon in electronic devices for high-power, high-frequency and high-temperature applications [7].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Omotoso

Meyer

Coelho

et al. 2016

Materials Science in Semiconductor Processing

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We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material, as-grown, as well as after high energy electron irradiation (HEEI). We observed that EBD introduced two electrically active defects with energies E C -0.42 and E C -0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (E C -0.10) as well as a defect linked to the carbon vacancy (E C -0.67). Annealing at 400 °C in Ar ambient removed these two defects introduced during the EBD.

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“…Silicon carbide (SiC) has drawn the interest of many researchers due to its wide bandgap of 3.4 eV [5] and the excellent properties such as high thermal conductivity, high breakdown field and high saturated drift velocity [6]. These characteristics make SiC a very good semiconductor capable of outperforming silicon in electronic devices for high-power, high-frequency and high-temperature applications [7].…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure

Omotoso

Meyer

Auret

et al. 2015

SSP

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Abstract. Deep level transient spectroscopy (DLTS) was used to characterize the defects introduced in n-type, N-doped, 4H-SiC while being exposed to electron beam evaporation conditions. This was done by heating a tungsten source using an electron beam current of 100 mA, which was not sufficient to evaporate tungsten. Two new defects were introduced during the exposure of 4H-SiC samples to electron beam deposition conditions (without metal deposition) after resistively evaporated nickel Schottky contacts. We established the identity of these defects by comparing their signatures to those of high energy particle irradiation induced defects of the same materials. The defect E 0.42 had acceptor-like behaviour and could be attributed to be a silicon or carbon vacancy. The E 0.71 had intrinsic nature and was linked to a carbon vacancy and/or carbon interstials.

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Role of carbon in the formation of ohmic contact in Ni/4H SiC and Ni/Ti/4H SiC

Cited by 27 publications

References 25 publications

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Electrical Characterization of Defects Introduced in <i>n</i>-Type N-Doped 4H-SiC during Electron Beam Exposure

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