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A novel pixel circuit providing expanded data voltage range is proposed for high resolution and high image quality organic lightemitting diode-on-silicon (OLEDoS) microdisplay applications. The proposed pixel circuit adopts a structure of four series connected NMOSFETs (4-SCN) to expand the input data voltage range, within which the circuit operates in the subthreshold region. In addition, the pixel circuit has improved image quality by introducing a compensation scheme. The proposed circuit is verified by the simulation based on a 0.18 μm BCDlite Isolation process. The proposed circuit can be integrated into a unit subpixel area of 2.9 × 8.7 μm 2 . The simulation results show that the input data voltage range of the proposed pixel circuit is 6.26 times wider than that of the traditional 2T1C pixel circuit [1], which is 4.42V. And the emission current deviation ranges from -4.7% to +4.2% under the threshold voltage variation of 5 mV, which is 31.01% for a traditional 2T1C pixel circuit [1].

A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

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This work presents a peripheral compensation scheme for AMOLED displays, in which threshold voltage and aging information of driving TFT, and the signal data voltage are analogously added in the pixel circuits without changing the gamma corrections and increasing the bit and voltage range of DAC. Without increasing the resolution and voltage range of DAC, the cost and power consumption are reduced. A driving scheme using current sensing method with adjustable settling time and peripheral compensation system are also proposed.

Dai Chong-Chong(代冲冲) a)b) , Liu Xue-Chao(刘学超) a) † , Zhou Tian-Yu(周天宇) a)b) , Zhuo Shi-Yi(卓世异) a) , Shi Biao(石 彪) c) , and Shi Er-Wei(施尔畏) a) a)

The RCA-cleaned 6H-SiC surface has a 1 nm native oxide layer, which was directly observed by high-resolution transmission electron microscopy and confirmed by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. The surface band bending caused by the native oxide layer was studied by synchrotron radiation photoelectron spectroscopy. The binding energy of Si 2p core level for the Ni/oxygen-free SiC interface showed almost zero shift (<0.07 eV). However, it red-shifted about 0.34 eV for the Ni/native-oxide/SiC interface, it indicated that negative charged interface states induced in the Ni/native-oxide interface resulted in the upward bending of the interface energy band.