Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C—SiC

Abstract

Dai Chong-Chong(代冲冲) a)b) , Liu Xue-Chao(刘学超) a) † , Zhou Tian-Yu(周天宇) a)b) , Zhuo Shi-Yi(卓世异) a) , Shi Biao(石 彪) c) , and Shi Er-Wei(施尔畏) a) a)

Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

“…Annealed Ni for n-type SiC or Al for p-type have been extensively used to obtain ohmic contacts with low contact resistivity [70,71], while Au [71], Ti [71], Pt [72], or Al [73] have been studied to obtain Schottky barriers. Nevertheless, using some metal that prevents the exploitation of silicon technology, as gold, the metallization should be performed outside of IC fabrication facilities because gold shows electromigration at relatively low temperatures.…”

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

“…As previously reported, the annealing temperature has a great effect on interfacial reaction between metal and semiconductors, or desorption of the nitrogen atoms from the p-type layer. [10,[18][19][20] In addition, while it has not been clarified from the values of the thermal expansion coefficients for GaN and InGaN, the change of the strain at the two contact layers by changing the annealing temperature is also a possible reason for the increase in ρ c values. Further investigation is needed to clarify the mechanism of the effect of annealing temperature on the Ohmic contact performance using the p ++ -InGaN and p ++ -GaN compound contact layer.…”

Electrical Property Study of Ni/Nb Contact to n-Type 4H-SiC

“…A number of different metals, such as Ni, Ti, Cr, Al, W, Mo, Pt, etc. have been widely studied in order to obtain good ohmic contact on different polytype SiC [3][4][5][6]. Among all of these metals, Ni is proposed as the best electrode metal for n-type 4H-SiC.…”